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Transistors / Power Field-Effect Transistors / IRLB4030PBF
Datasheets
IRLB4030PBF by:

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRLB4030PBF by Infineon Technologies AG

Overview of IRLB4030PBF by Infineon Technologies AG

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Price & Stock for IRLB4030PBF

Part # Distributor Description Stock Price Buy
DISTI # 448-IRLB4030PBF-ND
DigiKey MOSFET N-CH 100V 180A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 13564
In Stock
  • 1 $4.3500
  • 10 $3.6500
  • 100 $2.9530
  • 500 $2.6249
  • 1,000 $2.2475
  • 2,000 $2.1163
$2.1163 / $4.3500 Buy Now
DISTI # 942-IRLB4030PBF
Mouser Electronics MOSFET MOSFT 100V 180A 4.3mOhm 87nC RoHS: Compliant 1903
  • 1 $4.1300
  • 10 $3.5600
  • 25 $3.2200
  • 100 $2.7400
  • 250 $2.7100
  • 500 $2.4600
  • 1,000 $2.2300
  • 2,000 $2.1100
$2.1100 / $4.1300 Buy Now
Future Electronics Single N-Channel 100 V 4.5 mOhm 87 nC 3HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 12600
Tube
  • 50 $2.1400
  • 150 $2.0900
  • 500 $2.0400
  • 1,000 $2.0100
  • 2,000 $1.9500
$1.9500 / $2.1400 Buy Now
Future Electronics Single N-Channel 100 V 4.5 mOhm 87 nC 3HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 1003
Tube
  • 1 $2.2200
  • 30 $2.1600
  • 125 $2.1000
  • 300 $2.0500
  • 1,250 $1.9500
$1.9500 / $2.2200 Buy Now
DISTI # TMOSP12590
Rutronik N-CH 100V 180A 4,3mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube Stock DE - 1800
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 50 $2.2500
  • 100 $2.1200
  • 200 $1.9900
  • 400 $1.8000
  • 800 $1.7400
$1.7400 / $2.2500 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2018 Date Code: 2018 2
  • 1 $2.3300
  • 10 $2.2200
  • 50 $2.1500
  • 100 $2.0800
  • 500 $2.0500
  • 1,000 $2.0200
$2.0200 / $2.3300 Buy Now
DISTI # SP001552594
EBV Elektronik Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB (Alt: SP001552594) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 1698301
element14 Asia-Pacific MOSFET, N-CH 100V 180A TO220 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $4.3373
  • 10 $3.4199
  • 100 $2.8842
  • 500 $2.6053
  • 1,000 $2.3485
$2.3485 / $4.3373 Buy Now
DISTI # 1698301
Farnell MOSFET, N-CH 100V 180A TO220 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each 0
  • 1 $4.6081
  • 10 $3.2594
  • 100 $2.7474
  • 500 $2.4851
  • 1,000 $2.2354
$2.2354 / $4.6081 Buy Now

Part Details for IRLB4030PBF

IRLB4030PBF CAD Models

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IRLB4030PBF Part Data Attributes

Parametric Data
IRLB4030PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLB4030PBF Infineon Technologies AG Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 305 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 370 W
Pulsed Drain Current-Max (IDM) 730 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLB4030PBF

This table gives cross-reference parts and alternative options found for IRLB4030PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLB4030PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRLS4030-7TRL Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 Infineon Technologies AG IRLB4030PBF vs AUIRLS4030-7TRL
AUIRLS4030-7P Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier IRLB4030PBF vs AUIRLS4030-7P
CSD19536KTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments IRLB4030PBF vs CSD19536KTT
AUIRLS4030 Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRLB4030PBF vs AUIRLS4030
IRLSL4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, IPAK-3 Infineon Technologies AG IRLB4030PBF vs IRLSL4030PBF
AUIRLS4030-7TRR Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier IRLB4030PBF vs AUIRLS4030-7TRR
AUIRLS4030-7TRR Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 Infineon Technologies AG IRLB4030PBF vs AUIRLS4030-7TRR
IRLS4030-7PPBF Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 Infineon Technologies AG IRLB4030PBF vs IRLS4030-7PPBF
AUIRLS4030TRR Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRLB4030PBF vs AUIRLS4030TRR
AUIRLS4030-7P Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 Infineon Technologies AG IRLB4030PBF vs AUIRLS4030-7P

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