Part Details for AUIRLS4030-7P by Infineon Technologies AG
Overview of AUIRLS4030-7P by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRLS4030-7P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28W1190
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Newark | Mosfet Transistor, N Channel, 190 A, 100 V, 0.0032 Ohm, 10 V, 1 V Rohs Compliant: Yes |Infineon AUIRLS4030-7P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
2148082
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$2.2153 | Buy Now |
DISTI #
2148082
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Farnell | MOSFET, N-CH, 100V, 190A, D2PAK-7P RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 3 Days Container: Each | 0 |
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$4.3730 / $5.9518 | Buy Now |
Part Details for AUIRLS4030-7P
AUIRLS4030-7P CAD Models
AUIRLS4030-7P Part Data Attributes:
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AUIRLS4030-7P
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRLS4030-7P
Infineon Technologies AG
Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | D2PAK-7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 190 A | |
Drain-source On Resistance-Max | 0.0039 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 370 W | |
Pulsed Drain Current-Max (IDM) | 750 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AUIRLS4030-7P
This table gives cross-reference parts and alternative options found for AUIRLS4030-7P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRLS4030-7P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRLS4030-7PPBF | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 | International Rectifier | AUIRLS4030-7P vs IRLS4030-7PPBF |
AUIRLS4030-7P | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 | International Rectifier | AUIRLS4030-7P vs AUIRLS4030-7P |
IRLS4030-7PPBF | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 | Infineon Technologies AG | AUIRLS4030-7P vs IRLS4030-7PPBF |
AUIRLS4030-7TRL | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 | Infineon Technologies AG | AUIRLS4030-7P vs AUIRLS4030-7TRL |
AUIRLS4030-7TRR | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 | Infineon Technologies AG | AUIRLS4030-7P vs AUIRLS4030-7TRR |