Part Details for IRLSL4030PBF by Infineon Technologies AG
Overview of IRLSL4030PBF by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRLSL4030PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
448-IRLSL4030PBF-ND
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DigiKey | MOSFET N-CH 100V 180A TO262 Min Qty: 1 Lead time: 12 Weeks Container: Tube |
990 In Stock |
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$2.1360 / $4.3900 | Buy Now |
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DISTI #
IRLSL4030PBF
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Avnet Americas | Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube (Alt: IRLSL4030PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$1.8444 / $2.2542 | Buy Now |
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DISTI #
942-IRLSL4030PBF
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Mouser Electronics | MOSFET MOSFT 100V 180A 4.3mOhm 87nC RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
V99:2348_13889648
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Arrow Electronics | Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2246 | Americas - 700 |
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$1.7990 / $2.6100 | Buy Now |
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DISTI #
V36:1790_13889648
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Arrow Electronics | Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2244 | Americas - 185 |
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$1.5990 / $1.9140 | Buy Now |
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DISTI #
70019896
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RS | IRLSL4030PBF N-channel MOSFET Transistor, 180 A, 100 V, 3-Pin TO-262 | Infineon IRLSL4030PBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
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$6.1900 | RFQ |
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Future Electronics | Single N-Channel 100 V 4.5 mOhm 130 nC HEXFET® Power Mosfet - TO-262-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$2.1000 / $2.3100 | Buy Now |
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Future Electronics | Single N-Channel 100 V 4.5 mOhm 130 nC HEXFET® Power Mosfet - TO-262-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$2.1000 / $2.3100 | Buy Now |
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DISTI #
79931638
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Verical | Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube Min Qty: 13 Package Multiple: 1 Date Code: 2326 | Americas - 1000 |
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$2.4625 / $2.4875 | Buy Now |
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DISTI #
65134148
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Verical | Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube Min Qty: 4 Package Multiple: 1 Date Code: 2246 | Americas - 700 |
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$1.7990 / $2.6100 | Buy Now |
Part Details for IRLSL4030PBF
IRLSL4030PBF CAD Models
IRLSL4030PBF Part Data Attributes:
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IRLSL4030PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLSL4030PBF
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 305 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0043 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 370 W | |
| Pulsed Drain Current-Max (IDM) | 730 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLSL4030PBF
This table gives cross-reference parts and alternative options found for IRLSL4030PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLSL4030PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLS4030PBF | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLSL4030PBF vs IRLS4030PBF |
| AUIRLS4030-7P | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 | International Rectifier | IRLSL4030PBF vs AUIRLS4030-7P |
| AUIRLS4030-7TRL | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 | Infineon Technologies AG | IRLSL4030PBF vs AUIRLS4030-7TRL |
| AUIRLS4030TRL | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRLSL4030PBF vs AUIRLS4030TRL |
| AUIRLS4030-7TRR | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 | International Rectifier | IRLSL4030PBF vs AUIRLS4030-7TRR |
| AUIRLS4030-7P | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 | Infineon Technologies AG | IRLSL4030PBF vs AUIRLS4030-7P |
| IRLS4030-7PPBF | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 | Infineon Technologies AG | IRLSL4030PBF vs IRLS4030-7PPBF |
| IRLB4030PBF | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRLSL4030PBF vs IRLB4030PBF |
| AUIRLS4030TRR | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | IRLSL4030PBF vs AUIRLS4030TRR |
| IRLS4030-7PPBF | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 | International Rectifier | IRLSL4030PBF vs IRLS4030-7PPBF |