Datasheets
CSD19536KTT by:

100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175

Part Details for CSD19536KTT by Texas Instruments

Overview of CSD19536KTT by Texas Instruments

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for CSD19536KTT

Part # Distributor Description Stock Price Buy
DISTI # 296-47254-1-ND
DigiKey MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1934
In Stock
  • 1 $4.4400
  • 10 $3.7280
  • 100 $3.0161
  • 500 $2.6809
  • 1,000 $2.2956
  • 2,500 $2.1615
$2.1615 / $4.4400 Buy Now
DISTI # 595-CSD19536KTT
Mouser Electronics MOSFET 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 RoHS: Compliant 24
  • 1 $4.4400
  • 10 $3.7300
  • 100 $3.0200
  • 500 $2.6300
  • 1,000 $2.2900
  • 2,500 $2.1600
$2.1600 / $4.4400 Buy Now
DISTI # V72:2272_07248866
Arrow Electronics Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2306 Container: Cut Strips Americas - 426
  • 1 $4.1390
  • 10 $3.5400
  • 25 $3.5050
  • 100 $2.9190
  • 250 $2.8890
  • 500 $2.1280
$2.1280 / $4.1390 Buy Now
DISTI # CSD19536KTT
TME Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 375W, D2PAK Min Qty: 1 0
  • 1 $5.1900
  • 5 $4.6800
  • 25 $4.1300
  • 100 $3.7100
  • 500 $3.4600
$3.4600 / $5.1900 RFQ
Ameya Holding Limited   5601
RFQ
DISTI # C1S746203898557
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 500
  • 1 $2.1300
  • 10 $2.0700
  • 50 $2.0300
$2.0300 / $2.1300 Buy Now
Win Source Electronics MOSFET N-CH 100V 200A DDPAK 105040
  • 14 $3.6740
  • 34 $3.0150
  • 52 $2.9210
  • 71 $2.8270
  • 92 $2.7320
  • 123 $2.4500
$2.4500 / $3.6740 Buy Now

Part Details for CSD19536KTT

CSD19536KTT CAD Models

CSD19536KTT Part Data Attributes:

CSD19536KTT Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD19536KTT Texas Instruments 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 806 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 200 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 61 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD19536KTT

This table gives cross-reference parts and alternative options found for CSD19536KTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19536KTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRLS4030TRR Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier CSD19536KTT vs AUIRLS4030TRR
AUIRLS4030TRL Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG CSD19536KTT vs AUIRLS4030TRL
IRLS4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, DPAK-3 Infineon Technologies AG CSD19536KTT vs IRLS4030PBF
Part Number Description Manufacturer Compare
IRLS4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, DPAK-3 Infineon Technologies AG CSD19536KTT vs IRLS4030PBF
IRLSL4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, IPAK-3 Infineon Technologies AG CSD19536KTT vs IRLSL4030PBF
AUIRLS4030-7P Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier CSD19536KTT vs AUIRLS4030-7P
AUIRLS4030-7TRL Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 Infineon Technologies AG CSD19536KTT vs AUIRLS4030-7TRL
AUIRLS4030TRL Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG CSD19536KTT vs AUIRLS4030TRL
AUIRLS4030-7TRR Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier CSD19536KTT vs AUIRLS4030-7TRR
AUIRLS4030-7P Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 Infineon Technologies AG CSD19536KTT vs AUIRLS4030-7P
IRLS4030-7PPBF Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 Infineon Technologies AG CSD19536KTT vs IRLS4030-7PPBF
IRLB4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG CSD19536KTT vs IRLB4030PBF
AUIRLS4030TRR Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier CSD19536KTT vs AUIRLS4030TRR

Resources and Additional Insights for CSD19536KTT

Reference Designs related to CSD19536KTT

  • Accurate gauging and 50-µA standby current: 13-S: 48-V li-ion battery pack reference design
    This reference design is a low standby and ship mode current consumption and high SOC gauging accuracy 13S: 48-V Li-ion battery pack design. It monitors each cell voltage: pack current and temperature with high accuracy and protects the Li-ion battery pack against overvoltage: undervoltage: over temperature and over current situations. The SOC gauging: based on bq34z100-g1: takes advantage of an impedance tracking algorithm and achieves as high as 2% accuracy at room temperature. Through a well-designed auxiliary power supply strategy and high efficiency: low quiescent current DC-DC converter LM5164: this design achieves 50-μA stand-by and 5-μA ship mode consumption: saving more energy and allowing longer shipping time and idle time. Also: this design supports a well running firmware: which helps to decrease product research time.
  • 16s battery pack reference design with low-side MOSFET control for large capacity applications
  • Automotive 48-V: 1-kW Motor Drive Reference Design
    TIDA-00281 is a 3-phase brushless DC (BLDC) motor drive designed to operate in 48-V automotive applications. The board is designed to drive motors in the 1-kW range and can handle currents up to 30 A. The design includes analog circuits working in conjunction with a C2000 LaunchPad to spin a 3-phase BLDC motor without the need for position feedback from hall effect sensors or quadrature encoder.
  • 54-V: 1.5 kW: >99% Efficient: 70x69 mm2 power stage reference design for 3-phase BLDC drives
    This reference design demonstrates a 1.5-kW power stage for driving a three-phase brushless DC motor in cordless tools operating from a 15-cell Li-ion battery with a voltage up to 63-V. The design is a 70mm x 69mm compact drive: bringing 25-ARMS continuous current at 20-kHz switching frequency without heat sink and with natural convection: implementing sensorbased trapezoidal control. The design achieves optimized MOSFET switching loss and EMI by using a smart gate driver with optimized MOSFET and PCB. The design shows MOSFET operation within the safe operating area using enhanced protections including MOSFET over current and shoot-through protection by VDS monitoring: gate protection: switching voltage spike optimization with slew rate control and over temperature protection.
  • CC2541-TPS62730EM-RD CC2541-TPS62730EM 参考设计
    CC2541EM-TPS62730EM 参考设计包含 CC2541EM-TPS62730EM 模块的原理图和布局文件。该参考设计可演示用于 CC2541 去耦和射频布局的精湛技术。为了实现最佳射频性能,应该准确复制该参考设计。这是一个具有 SMA 天线连接器(便于射频输出与 50Ω 相匹配)的 4 层参考设计。此设计展示了用 TPS62730 DC/DC 转换器为 CC2541 供电的正确方法,这样可在工作模式下节约 30% 以上的电流。TPS62730 转换器由 CC2541 控制。
  • TIPD121 为隔离式电流分流监控器的热端供电
  • Protected DC-bus input power and control power supply reference design for low-voltage servo drives
    This reference design uses an ORing controller: the LM5050-1 to provide protection against reverse polarity and reverse current. In conjunction: the LM5069 hot swap controller is used for overcurrent: over voltage: under voltage protection: and inrush current limitation. The design also features power rails for the control electronics including the gate drive: encoder and MCU circuitry.
  • 16S-17S Battery pack reference design with low current consumption
    This reference design is a low standby and low ship mode current consumption 16S-17S LiFePO4 Li-ion battery pack design for telecom battery backup and emotorcycles. It was implemented for a 2-layer PCB. The 9S-15S AFE bq76940 monitors the lower 15 cells voltage and a two-channel general purpose amplifier LM2904B monitors the 16th and 17th battery cells voltage. The design protects the battery pack against overvoltage: undervoltage: overcurrent: and overtemperature: and it reduces energy consumption when in standby and shipping mode through a welldesigned auxiliary power supply strategy and a highly efficient: low quiescent current DC/DC converter LM5164: therefore allows longer shipping time and idle time.
  • 10s-16s battery pack reference design with accurate cell measurement and high-side MOSFET control
    This reference design is a low standby and ship-mode current consumption and high cell voltage accuracy 10s–16s Lithium-ion (Li-ion): LiFePO4 battery pack design. It monitors each cell voltage: pack current: cell and MOSFET temperature with high accuracy and protects the Li-ion: LiFePO4 battery pack against cell overvoltage: cell undervoltage: overtemperature: charge and discharge over current and discharge short-circuit situations. It adopts high-side N-channel MOSFET architecture and has strong driving on and off capability. Through an efficient auxiliary power supply strategy: this reference design achieves 100-μA standby and 10-μA ship mode consumption: saving more energy and allowing longer shipping time and idle time. These features make this reference design highly applicable for e-bike and e-scooter battery pack applications.
  • TIDA-00251 系统端 Impedance Track 电池电量监测计
    The TIDA-00251 reference design is an easy to configure microcontroller peripheral that provides system-side fuel gauging for single-cell Li-Ion batteries. The device requires minimal user configuration and system microcontroller firmware development. The design uses temperature, voltage, and cur
  • CC1120EM-169-RD CC1120EM 169MHz 参考设计
    This RF Layout Reference Design demonstrates good decoupling and layout techniques for a low power RF device operating in the169 MHz frequency band.
  • ADAS 8-Channel Sensor Fusion Hub Reference Design with Two 4-Gbps Quad Deserializers
    This sensor fusion hub reference design allows the connection of up to four 2-megapixel cameras and up to four radar modules over coaxial cable. This design utilizes these coaxial cables to provide power: backchannel communication: and clock synchronization to the sensors. The two 4 Gbps FPD-Link III quad deserializers support dual-outputs of the Mobile Industry Processor Interface (MIPI) Camera Serial Interface-2 (CSI-2) over a Samtec connector to application processors.
  • High-side N-MOSFET control (up to 32s) battery pack reference design with stacked battery monitor
  • 10s Battery Pack Monitoring: Balancing: and Comprehensive Protection. 50A Discharge Reference Design
    This reference design is ready tested for 10 cells in series battery pack monitoring: balancing and protection for power tools. Power tools increasingly use highly power-dense Li-Ion or Li-Iron phosphate cells based battery packs that need to be protected from explosion due to incorrect charging or discharging. TIDA-00449 also achieves thermal requirements for power tool battery packs when discharging at high continuous current.
  • 48-VDC Battery Powered 5-KW Inverter Power Stage Reference Design for Forklift AC Traction Motor
    TIDA-00364 is a reference design for 3-phase MOSFET-based inverter to drive AC induction motor for traction in forklifts. The inverter is powered from a 48-Vdc lead acid battery. It is designed to deliver 5 KW of output power and can handle continuous motor currents of up to 130 Arms with suitable cooling setup. High-current rating is achieved by using multiple MOSFETs (CSD19536) in parallel: mounted onto thermal-clad PCB. 120-V half-bridge MOSFET gate driver with 4-Apk source/sink current is used to control the MOSFETs. This design incorporates techniques and measures to operate MOSFET in parallel.
  • Multi-Cell 36-48V Battery Management System Reference Design
    This reference design provides monitoring: balancing: primary protection and gauging for a 12- to 15-cell lithium-ion or lithium-iron phosphate-based batteries. This board is intended to be mounted in an enclosure for industrial systems. The reference design provides battery protection and gauging configuration with parameters avoiding code development and provides high-side protection switching to allow simple PACK-referenced SMBus communication for battery status: even while protected.

CSD19536KTT Related Parts

Share by Email

Something went wrong!
Please enter a valid e-mail address
Email sent!
Recipient Email:
Add a recipient
Hello!

We are passing along some cool findings on Findchips sent to you from .

The data is for CSD19536KTT by Texas Instruments.
They’ve also added a data comparison to this page with by .


Click on the link below to check it out on Findchips.com.

Update Alert Settings for: CSD19536KTT by Texas Instruments

  • Please alert me when CSD19536KTT inventory levels are or equal to a quantity of from one of my selected distributors.
  • Also alert me for the following CSD19536KTT alternates:
    An alert is already set for the following part(s): . Any existing alert will be overwritten and set as a new alert.
No pricing information is available at this time
  • Please alert me when the single part price for CSD19536KTT to
    $
    for at least parts from one of my selected distributors.
    Your Pricing Alert is set to expire on .
    Set this alert to expire in Update this alert to expire · Expired on
  • Also alert me for the following CSD19536KTT alternates:
    An alert is already set for the following part(s): . Any existing alert will be overwritten and set as a new alert.

Your part alert has been saved!

Alerts are triggered based off of individual distributors that you choose. Select your distributor(s) below.

Your part alert has been saved!

Register
Password Guidelines

Is at least 8 characters in length

Must include at least 3 of the following:

One lower-case character (a-z)

One upper-case character (A-Z)

One numeric character (0-9)

One special character (!#$%^&*)

Alert is successfully saved for CSD19536KTT.
Looks like you've reached your alert limit!  Please delete some alerts or contact us if you need help.

Compare CSD19536KTT by Texas Instruments

Select a part to compare:
Part Number Manufacturer Description
No result found.
Something went wrong!
Or search for a different part: