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Transistors IGBTs IRG4PH40KPBF

IRG4PH40KPBF
Description: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3

Overview of IRG4PH40KPBF by Infineon Technologies AG

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Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

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Part Data Attributes for IRG4PH40KPBF by Infineon Technologies AG
Parametric Data

IRG4PH40KPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
LEAD FREE, PLASTIC PACKAGE-3
Reach Compliance Code
compliant
ECCN Code
EAR99
Date Of Intro
1997-07-15
Samacsys Manufacturer
Infineon
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
30 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SINGLE
Fall Time-Max (tf)
230 ns
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-247AC
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
160 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
1200 ns
Turn-on Time-Nom (ton)
53 ns
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  1. IRG4PH40KPBF
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
    VS

Alternate Parts for IRG4PH40KPBF

This table gives cross-reference parts and alternative options found for IRG4PH40KPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PH40KPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRG4PH40KPBF Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRG4PH40KPBF vs IRG4PH40KPBF
IRG4PH40K Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4PH40KPBF vs IRG4PH40K
IRG4PH40K Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4PH40KPBF vs IRG4PH40K
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRG4PH40KPBF vs SGP13N60UF
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IRG4PH40KPBF vs IXGH25N100U1
HGTP1N120CN Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRG4PH40KPBF vs HGTP1N120CN
HGTG18N120BN_NL Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IRG4PH40KPBF vs HGTG18N120BN_NL
IXGH12N100A Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4PH40KPBF vs IXGH12N100A
IXSH30N60B Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4PH40KPBF vs IXSH30N60B
IRG4BC30SPBF Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRG4PH40KPBF vs IRG4BC30SPBF
SGW13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRG4PH40KPBF vs SGW13N60UF
IRG4PC50K Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4PH40KPBF vs IRG4PC50K
HGT5A40N60A4D Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247ST, 3 PIN Fairchild Semiconductor Corporation IRG4PH40KPBF vs HGT5A40N60A4D

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