Part Details for IXGH12N100A by IXYS Corporation
Overview of IXGH12N100A by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for IXGH12N100A
IXGH12N100A CAD Models
IXGH12N100A Part Data Attributes
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IXGH12N100A
IXYS Corporation
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Datasheet
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IXGH12N100A
IXYS Corporation
Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1850 ns | |
| Turn-on Time-Nom (ton) | 300 ns |
Alternate Parts for IXGH12N100A
This table gives cross-reference parts and alternative options found for IXGH12N100A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGH12N100A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXGH12N100A vs SGP13N60UF |
| IXGH25N100U1 | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXGH12N100A vs IXGH25N100U1 |
| HGTP1N120CN | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IXGH12N100A vs HGTP1N120CN |
| HGTG18N120BN_NL | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | IXGH12N100A vs HGTG18N120BN_NL |
| IXSH30N60B | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH12N100A vs IXSH30N60B |
| IRG4BC30SPBF | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IXGH12N100A vs IRG4BC30SPBF |
| SGW13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | IXGH12N100A vs SGW13N60UF |
| IRG4PC50K | Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IXGH12N100A vs IRG4PC50K |
| HGT5A40N60A4D | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247ST, 3 PIN | Fairchild Semiconductor Corporation | IXGH12N100A vs HGT5A40N60A4D |
| IGW25T120 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | IXGH12N100A vs IGW25T120 |