Part Details for IRFZ24N by International Rectifier
Overview of IRFZ24N by International Rectifier
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFZ24N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 150 |
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RFQ | ||
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Bristol Electronics | 134 |
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RFQ | ||
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Bristol Electronics | 95 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 30 |
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$2.4188 / $4.8375 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 120 |
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$0.4375 / $0.8750 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 36 |
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$2.8000 / $4.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 68 |
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$3.1640 / $4.7460 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 117 |
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$0.4500 / $0.7500 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 1600 |
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$0.5000 / $0.7700 | Buy Now |
Part Details for IRFZ24N
IRFZ24N CAD Models
IRFZ24N Part Data Attributes:
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IRFZ24N
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFZ24N
International Rectifier
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 71 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 45 W | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ24N
This table gives cross-reference parts and alternative options found for IRFZ24N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ71 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRFZ24N vs BUZ71 |
| BUK453-60A | TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRFZ24N vs BUK453-60A |
| BUZ71 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Siliconix | IRFZ24N vs BUZ71 |
| IRFZ24N | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRFZ24N vs IRFZ24N |
| BTS114 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | IRFZ24N vs BTS114 |
| IRFZ24NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFZ24N vs IRFZ24NPBF |
| BUZ71 | 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRFZ24N vs BUZ71 |
| BUK453-60B | TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRFZ24N vs BUK453-60B |
| HUF75307P3 | 15A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRFZ24N vs HUF75307P3 |
| MTP15N05E | 15A, 50V, 7.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRFZ24N vs MTP15N05E |