Datasheets
NTD18N06LG by:

18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3

Part Details for NTD18N06LG by Rochester Electronics LLC

Overview of NTD18N06LG by Rochester Electronics LLC

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Part Details for NTD18N06LG

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NTD18N06LG Part Data Attributes:

NTD18N06LG Rochester Electronics LLC
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NTD18N06LG Rochester Electronics LLC 18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Package Description LEAD FREE, CASE 369C-01, DPAK-3
Pin Count 3
Manufacturer Package Code CASE 369C-01
Reach Compliance Code unknown
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 72 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 54 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTD18N06LG

This table gives cross-reference parts and alternative options found for NTD18N06LG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD18N06LG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTD18N06L 18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi NTD18N06LG vs NTD18N06L
NTD18N06LG Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi NTD18N06LG vs NTD18N06LG
NTD18N06LT4 18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi NTD18N06LG vs NTD18N06LT4
Part Number Description Manufacturer Compare
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC NTD18N06LG vs BUZ71
HUFA76409D3S 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation NTD18N06LG vs HUFA76409D3S
RFD14N05_NL 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN Rochester Electronics LLC NTD18N06LG vs RFD14N05_NL
HUF76409D3 17A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation NTD18N06LG vs HUF76409D3
AUIRF9Z34N Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier NTD18N06LG vs AUIRF9Z34N
2SJ174 Power Field-Effect Transistor, 20A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Hitachi Ltd NTD18N06LG vs 2SJ174
HUF76419D3 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Rochester Electronics LLC NTD18N06LG vs HUF76419D3
IRFZ24NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier NTD18N06LG vs IRFZ24NPBF
BUK9575-55A TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors NTD18N06LG vs BUK9575-55A
MTD3055V-T4 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC NTD18N06LG vs MTD3055V-T4

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