Datasheets
BTS114 by:

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for BTS114 by Infineon Technologies AG

Overview of BTS114 by Infineon Technologies AG

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Part Details for BTS114

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BTS114 Part Data Attributes:

BTS114 Infineon Technologies AG
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BTS114 Infineon Technologies AG Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BTS114

This table gives cross-reference parts and alternative options found for BTS114. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BTS114, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ24NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG BTS114 vs IRFZ24NPBF
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix BTS114 vs BUZ71
IRFZ24NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier BTS114 vs IRFZ24NPBF
SSP15N06 Power Field-Effect Transistor, 16A I(D), 60V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BTS114 vs SSP15N06
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BTS114 vs BUZ71
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation BTS114 vs BUZ71
MTP15N05E 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments BTS114 vs MTP15N05E
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BTS114 vs BUZ71
IRFZ24N,127 IRFZ24N NXP Semiconductors BTS114 vs IRFZ24N,127
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BTS114 vs BUZ71
Part Number Description Manufacturer Compare
IRF9Z34NSTRL Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier BTS114 vs IRF9Z34NSTRL
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor BTS114 vs HUF75321D3S
BUK553-60A TRANSISTOR 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors BTS114 vs BUK553-60A
HUFA76413D3 Power Field-Effect Transistor, 20A I(D), 60V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation BTS114 vs HUFA76413D3
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi BTS114 vs MTD1N50E1
HUFA75321D3S Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation BTS114 vs HUFA75321D3S
934056617118 Power Field-Effect Transistor Nexperia BTS114 vs 934056617118
HUFA75329D3S Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation BTS114 vs HUFA75329D3S
HUFA76419D3ST N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 43mΩ, 2500-REEL, Automotive Qualified onsemi BTS114 vs HUFA76419D3ST
BUK7575-55A Power Field-Effect Transistor Nexperia BTS114 vs BUK7575-55A

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