Datasheets
IRF840LCLPBF by:

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

Part Details for IRF840LCLPBF by Vishay Siliconix

Overview of IRF840LCLPBF by Vishay Siliconix

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Price & Stock for IRF840LCLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF840LCLPBF-ND
DigiKey MOSFET N-CH 500V 8A I2PAK Min Qty: 1 Lead time: 20 Weeks Container: Tube 1987
In Stock
  • 1 $2.8300
  • 50 $2.2462
  • 100 $1.9253
  • 500 $1.7113
  • 1,000 $1.4653
  • 2,000 $1.3798
  • 5,000 $1.3237
$1.3237 / $2.8300 Buy Now
Bristol Electronics   300
RFQ
Quest Components   240
  • 1 $3.3060
  • 32 $2.2040
  • 114 $2.0387
$2.0387 / $3.3060 Buy Now

Part Details for IRF840LCLPBF

IRF840LCLPBF CAD Models

IRF840LCLPBF Part Data Attributes

IRF840LCLPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRF840LCLPBF Vishay Siliconix Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 510 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF840LCLPBF

This table gives cross-reference parts and alternative options found for IRF840LCLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840LCLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF840LCLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRF840LCLPBF vs IRF840LCLPBF
IRF840LCLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN Vishay Intertechnologies IRF840LCLPBF vs IRF840LCLPBF
IRF840LCL Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRF840LCLPBF vs IRF840LCL
Part Number Description Manufacturer Compare
IRFSL11N50A Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRF840LCLPBF vs IRFSL11N50A
2SK2777(2-10S1B) TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRF840LCLPBF vs 2SK2777(2-10S1B)
STB11NM60-1 N-channel 600 V, 0.4 Ohm, 11 A, I2PAK, D2PAK MDmesh(TM) Power MOSFET STMicroelectronics IRF840LCLPBF vs STB11NM60-1
SSI10N60BTU Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRF840LCLPBF vs SSI10N60BTU
SSI7N60B Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRF840LCLPBF vs SSI7N60B
FQI12N60 Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRF840LCLPBF vs FQI12N60
IRF830ALPBF Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRF840LCLPBF vs IRF830ALPBF
FQI6N60 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRF840LCLPBF vs FQI6N60
STI13NM60N N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package STMicroelectronics IRF840LCLPBF vs STI13NM60N
2SK3312(2-10S1B) TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRF840LCLPBF vs 2SK3312(2-10S1B)

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