Datasheets
STI13NM60N by: STMicroelectronics

N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package

Part Details for STI13NM60N by STMicroelectronics

Overview of STI13NM60N by STMicroelectronics

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Price & Stock for STI13NM60N

Part # Distributor Description Stock Price Buy
DISTI # 497-STI13NM60N-ND
DigiKey MOSFET N-CH 600V 11A I2PAK Min Qty: 1000 Lead time: 16 Weeks Container: Tube Temporarily Out of Stock
  • 1,000 $0.8766
$0.8766 Buy Now
DISTI # STI13NM60N
Avnet Americas Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) I2PAK Tube - Rail/Tube (Alt: STI13NM60N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.7938
  • 2,000 $0.7612
  • 4,000 $0.7520
  • 6,000 $0.7431
$0.7431 / $0.7938 Buy Now
DISTI # 511-STI13NM60N
Mouser Electronics MOSFETs N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK RoHS: Compliant 919
  • 1 $1.8500
  • 10 $1.5400
  • 100 $1.2200
  • 250 $1.1300
  • 500 $1.0200
  • 1,000 $0.8100
  • 5,000 $0.8060
  • 10,000 $0.7880
$0.7880 / $1.8500 Buy Now
STMicroelectronics N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package RoHS: Compliant Min Qty: 1 919
  • 1 $1.8100
  • 10 $1.5100
  • 100 $1.2000
  • 250 $1.1100
  • 500 $1.0000
$1.0000 / $1.8100 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks 0
  • 1,000 $0.8330
$0.8330 Buy Now
Quest Components   191
  • 1 $2.6320
  • 47 $0.9870
  • 153 $0.9212
$0.9212 / $2.6320 Buy Now
DISTI # STI13NM60N
Avnet Silica Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) I2PAK Tube (Alt: STI13NM60N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STI13NM60N
EBV Elektronik Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) I2PAK Tube (Alt: STI13NM60N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STI13NM60N

STI13NM60N CAD Models

STI13NM60N Part Data Attributes

STI13NM60N STMicroelectronics
Buy Now Datasheet
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STI13NM60N STMicroelectronics N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 44 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STI13NM60N

This table gives cross-reference parts and alternative options found for STI13NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI13NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFBC40LPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STI13NM60N vs IRFBC40LPBF
IRFBC30LPBF International Rectifier Check for Price Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN STI13NM60N vs IRFBC30LPBF
IRFBC40L International Rectifier Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN STI13NM60N vs IRFBC40L
2SK3688-01L Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 16A I(D), 600V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPACK-3 STI13NM60N vs 2SK3688-01L
SSI7N60B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 STI13NM60N vs SSI7N60B
SSI7N60BTU Rochester Electronics LLC Check for Price 7A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 STI13NM60N vs SSI7N60BTU
2SK3299-S Renesas Electronics Corporation Check for Price 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN STI13NM60N vs 2SK3299-S
2SK3889-01L Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN STI13NM60N vs 2SK3889-01L
IRFBC20LPBF International Rectifier Check for Price Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN STI13NM60N vs IRFBC20LPBF
IRF840LCLPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STI13NM60N vs IRF840LCLPBF

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