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N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-STI13NM60N-ND
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DigiKey | MOSFET N-CH 600V 11A I2PAK Min Qty: 1000 Lead time: 16 Weeks Container: Tube | Temporarily Out of Stock |
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$0.8766 | Buy Now |
DISTI #
STI13NM60N
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Avnet Americas | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) I2PAK Tube - Rail/Tube (Alt: STI13NM60N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$0.7431 / $0.7938 | Buy Now |
DISTI #
511-STI13NM60N
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Mouser Electronics | MOSFETs N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK RoHS: Compliant | 919 |
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$0.7880 / $1.8500 | Buy Now |
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STMicroelectronics | N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package RoHS: Compliant Min Qty: 1 | 919 |
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$1.0000 / $1.8100 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks | 0 |
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$0.8330 | Buy Now |
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Quest Components | 191 |
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$0.9212 / $2.6320 | Buy Now | |
DISTI #
STI13NM60N
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Avnet Silica | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) I2PAK Tube (Alt: STI13NM60N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
STI13NM60N
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EBV Elektronik | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) I2PAK Tube (Alt: STI13NM60N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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STI13NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STI13NM60N
STMicroelectronics
N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.36 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 90 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STI13NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI13NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFBC40LPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STI13NM60N vs IRFBC40LPBF |
IRFBC30LPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | STI13NM60N vs IRFBC30LPBF |
IRFBC40L | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | STI13NM60N vs IRFBC40L |
2SK3688-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 16A I(D), 600V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPACK-3 | STI13NM60N vs 2SK3688-01L |
SSI7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | STI13NM60N vs SSI7N60B |
SSI7N60BTU | Rochester Electronics LLC | Check for Price | 7A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | STI13NM60N vs SSI7N60BTU |
2SK3299-S | Renesas Electronics Corporation | Check for Price | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN | STI13NM60N vs 2SK3299-S |
2SK3889-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | STI13NM60N vs 2SK3889-01L |
IRFBC20LPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | STI13NM60N vs IRFBC20LPBF |
IRF840LCLPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STI13NM60N vs IRF840LCLPBF |