Datasheets
IRF840LCL by:

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

Part Details for IRF840LCL by International Rectifier

Overview of IRF840LCL by International Rectifier

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Part Details for IRF840LCL

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IRF840LCL Part Data Attributes:

IRF840LCL International Rectifier
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IRF840LCL International Rectifier Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 510 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF840LCL

This table gives cross-reference parts and alternative options found for IRF840LCL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840LCL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF840LCLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN Vishay Intertechnologies IRF840LCL vs IRF840LCLPBF
IRF840LCLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay Siliconix IRF840LCL vs IRF840LCLPBF
IRF840LCLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRF840LCL vs IRF840LCLPBF
Part Number Description Manufacturer Compare
IRF830ALPBF Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay Siliconix IRF840LCL vs IRF830ALPBF
2SK3513-01L Power Field-Effect Transistor, 12A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fuji Electric Co Ltd IRF840LCL vs 2SK3513-01L
IRFBC40LPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRF840LCL vs IRFBC40LPBF
IRFBC20L Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRF840LCL vs IRFBC20L
FQI4N60TU Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRF840LCL vs FQI4N60TU
STB11NM60Z-1 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 STMicroelectronics IRF840LCL vs STB11NM60Z-1
IRFBC30L Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRF840LCL vs IRFBC30L
IRF830ALPBF Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRF840LCL vs IRF830ALPBF
FQI12N60TU 10.5A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 Rochester Electronics LLC IRF840LCL vs FQI12N60TU
IRFSL9N60ATRR Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRF840LCL vs IRFSL9N60ATRR

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