Datasheets
IRF7307 by:

Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRF7307 by International Rectifier

Overview of IRF7307 by International Rectifier

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Price & Stock for IRF7307

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, Pair, Complementary, SO 3
  • 1 $0.6600
$0.6600 Buy Now
Quest Components MOSFET Transistor, Pair, Complementary, SO 108
  • 1 $1.1000
  • 24 $0.6600
  • 92 $0.5500
$0.5500 / $1.1000 Buy Now
DISTI # SMC-IRF7307
Sensible Micro Corporation Mosfet Transistor, Pair, Complementary, So RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 07+ Container: Cut Tape 16
  • 100 $0.7520
  • 500 $0.7520
  • 1,000 $0.7520
$0.7520 RFQ
Win Source Electronics Power MOSFET 28746
  • 6 $9.0440
  • 14 $7.4210
  • 21 $7.1890
  • 29 $6.9570
  • 38 $6.7250
  • 50 $6.0290
$6.0290 / $9.0440 Buy Now

Part Details for IRF7307

IRF7307 CAD Models

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IRF7307 Part Data Attributes:

IRF7307 International Rectifier
Buy Now Datasheet
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IRF7307 International Rectifier Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for IRF7307

This table gives cross-reference parts and alternative options found for IRF7307. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7307, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7307 Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7307 vs IRF7307
IRF7307TR Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF7307 vs IRF7307TR
IRF7307TRPBF Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7307 vs IRF7307TRPBF
Part Number Description Manufacturer Compare
IRF7307TRPBF Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7307 vs IRF7307TRPBF
FDS9934C 6.5A, 20V, 0.03ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC IRF7307 vs FDS9934C
RF1K4909296 3.5A, 12V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation IRF7307 vs RF1K4909296
RF1K4909296 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation IRF7307 vs RF1K4909296
RF1K4909296 3.5A, 12V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA Rochester Electronics LLC IRF7307 vs RF1K4909296
FDS8928A Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation IRF7307 vs FDS8928A
FDS8928A 5.5A, 30V, 0.03ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC IRF7307 vs FDS8928A
FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor, 2500-REEL onsemi IRF7307 vs FDS8928A
FDS9934C Complementary PowerTrench® MOSFET 20V, 2500-REEL onsemi IRF7307 vs FDS9934C
MMDF2C01HDR2 5.2A, 20V, 0.055ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8 Motorola Mobility LLC IRF7307 vs MMDF2C01HDR2

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