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FDS8928A by:

Dual N & P-Channel Enhancement Mode Field Effect Transistor, 2500-REEL

Part Details for FDS8928A by onsemi

Overview of FDS8928A by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDS8928A

Part # Distributor Description Stock Price Buy
DISTI # 73AK1032
Newark Mosfet, Dual, Np, Smd, 8-Soic |Onsemi FDS8928A Min Qty: 640 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $0.8110
  • 1,000 $0.7480
$0.7480 / $0.8110 Buy Now
DISTI # 38C7181
Newark Dual N/P Channel Mosfet, 30V, Soic, Transistor Polarity:Complementary N And P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.5A, On Resistance Rds(On):0.025Ohm, Transistor Mounting:Surface Mount, Product Range:-Rohs Compliant: Yes |Onsemi FDS8928A Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 29X6699
Newark Mosfet, N/P Channel, 30V, 5.5A, Soic-8, Transistor Polarity:Complementary N And P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.5A, On Resistance Rds(On):0.025Ohm, Transistor Mounting:Surface Mount Rohs Compliant: Yes |Onsemi FDS8928A Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now

Part Details for FDS8928A

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FDS8928A Part Data Attributes:

FDS8928A onsemi
Buy Now Datasheet
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FDS8928A onsemi Dual N & P-Channel Enhancement Mode Field Effect Transistor, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SOIC-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS8928A

This table gives cross-reference parts and alternative options found for FDS8928A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8928A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS8928A Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS8928A vs FDS8928A
Part Number Description Manufacturer Compare
IRF7307 Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier FDS8928A vs IRF7307
IRF7307TRPBF Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier FDS8928A vs IRF7307TRPBF
FDS8928A Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS8928A vs FDS8928A
FDS9934C_NL Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS8928A vs FDS9934C_NL
RF1K4909296 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor FDS8928A vs RF1K4909296
FDS9934C 6.5A, 20V, 0.03ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC FDS8928A vs FDS9934C
FDS9934C Complementary PowerTrench® MOSFET 20V, 2500-REEL onsemi FDS8928A vs FDS9934C
RF1K4909296 3.5A, 12V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation FDS8928A vs RF1K4909296
RF1K49092 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor FDS8928A vs RF1K49092
RF1K4909296 3.5A, 12V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA Rochester Electronics LLC FDS8928A vs RF1K4909296

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