Datasheets
HGTG5N120BND_NL by:

Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Part Details for HGTG5N120BND_NL by Fairchild Semiconductor Corporation

Overview of HGTG5N120BND_NL by Fairchild Semiconductor Corporation

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Part Details for HGTG5N120BND_NL

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HGTG5N120BND_NL Part Data Attributes:

HGTG5N120BND_NL Fairchild Semiconductor Corporation
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HGTG5N120BND_NL Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 21 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 200 ns
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Qualification Status Not Qualified
Rise Time-Max (tr) 20 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 357 ns
Turn-on Time-Nom (ton) 35 ns

Alternate Parts for HGTG5N120BND_NL

This table gives cross-reference parts and alternative options found for HGTG5N120BND_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG5N120BND_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG5N120BND 1200V, NPT IGBT, 450-TUBE onsemi HGTG5N120BND_NL vs HGTG5N120BND
HGTG5N120BND Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTG5N120BND_NL vs HGTG5N120BND
Part Number Description Manufacturer Compare
HGT1S3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation HGTG5N120BND_NL vs HGT1S3N60B3S
APT45GL100BN 45A, 1000V, N-CHANNEL IGBT, TO-247 Microsemi Corporation HGTG5N120BND_NL vs APT45GL100BN
IRG4BC20W-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG HGTG5N120BND_NL vs IRG4BC20W-S
HGTP20N60C3R Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel Fairchild Semiconductor Corporation HGTG5N120BND_NL vs HGTP20N60C3R
IRGPC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC International Rectifier HGTG5N120BND_NL vs IRGPC50U
IRG4BC20FD-STRR Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier HGTG5N120BND_NL vs IRG4BC20FD-STRR
HGTD7N60C3S9A 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL onsemi HGTG5N120BND_NL vs HGTD7N60C3S9A
HGTP12N60C3 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, Fairchild Semiconductor Corporation HGTG5N120BND_NL vs HGTP12N60C3
IRG4BC40K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG HGTG5N120BND_NL vs IRG4BC40K
1MB10-120 Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd HGTG5N120BND_NL vs 1MB10-120

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