Part Details for HGTD7N60C3S9A by onsemi
Overview of HGTD7N60C3S9A by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGTD7N60C3S9A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
HGTD7N60C3S9AOSCT-ND
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DigiKey | IGBT 600V 14A TO252AA Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1981 In Stock |
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$0.8733 / $1.8400 | Buy Now |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 14A, 600V, N-Channel, TO-252AA RoHS: Compliant Status: Obsolete Min Qty: 1 | 5000 |
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$1.0500 / $1.2300 | Buy Now |
Part Details for HGTD7N60C3S9A
HGTD7N60C3S9A CAD Models
HGTD7N60C3S9A Part Data Attributes:
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HGTD7N60C3S9A
onsemi
Buy Now
Datasheet
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Compare Parts:
HGTD7N60C3S9A
onsemi
14A,600V, UFS Series N-Channel IGBTs, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-252AA, 3 PIN | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | RC-IGBT | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 14 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 275 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 675 ns | |
| Turn-off Time-Nom (toff) | 490 ns | |
| Turn-on Time-Nom (ton) | 20 ns | |
| VCEsat-Max | 2 V |
Alternate Parts for HGTD7N60C3S9A
This table gives cross-reference parts and alternative options found for HGTD7N60C3S9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD7N60C3S9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 2500/TAPE REEL | Fairchild Semiconductor Corporation | HGTD7N60C3S9A vs HGTD7N60C3S9A |
| HGTD7N60C3S9A | 14A, 600V, N-CHANNEL IGBT, TO-252AA | Intersil Corporation | HGTD7N60C3S9A vs HGTD7N60C3S9A |
| HGTD7N60C3S | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | HGTD7N60C3S9A vs HGTD7N60C3S |
| HGTD7N60C3S | 14A, 600V, N-CHANNEL IGBT, TO-252AA | Intersil Corporation | HGTD7N60C3S9A vs HGTD7N60C3S |