Part Details for HGTG5N120BND by Fairchild Semiconductor Corporation
Overview of HGTG5N120BND by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGTG5N120BND
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | IGBT 1200V 21A 167W TO247 | 112500 |
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RFQ | |
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Win Source Electronics | IGBT 1200V 21A 167W TO247 | 38275 |
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$1.5080 / $2.2610 | Buy Now |
Part Details for HGTG5N120BND
HGTG5N120BND CAD Models
HGTG5N120BND Part Data Attributes
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HGTG5N120BND
Fairchild Semiconductor Corporation
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Datasheet
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HGTG5N120BND
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-247 | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 21 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 200 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 20 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 357 ns | |
| Turn-on Time-Nom (ton) | 35 ns |
Alternate Parts for HGTG5N120BND
This table gives cross-reference parts and alternative options found for HGTG5N120BND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG5N120BND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTG5N120BND_NL | Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | HGTG5N120BND vs HGTG5N120BND_NL |
| HGTG5N120BND | 21A, 1200V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGTG5N120BND vs HGTG5N120BND |
| HGTG5N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | HGTG5N120BND vs HGTG5N120BND |