Datasheets
HGTG30N60B3 by:

600V, PT IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL

Part Details for HGTG30N60B3 by Fairchild Semiconductor Corporation

Overview of HGTG30N60B3 by Fairchild Semiconductor Corporation

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Price & Stock for HGTG30N60B3

Part # Distributor Description Stock Price Buy
Rochester Electronics 600 V, NPT IGBT RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 600
  • 1 $3.1900
  • 25 $3.1200
  • 100 $3.0000
  • 500 $2.8700
  • 1,000 $2.7100
$2.7100 / $3.1900 Buy Now

Part Details for HGTG30N60B3

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HGTG30N60B3 Part Data Attributes:

HGTG30N60B3 Fairchild Semiconductor Corporation
Buy Now Datasheet
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HGTG30N60B3 Fairchild Semiconductor Corporation 600V, PT IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Manufacturer Package Code TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 150 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 365 ns
Turn-on Time-Nom (ton) 56 ns

Alternate Parts for HGTG30N60B3

This table gives cross-reference parts and alternative options found for HGTG30N60B3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG30N60B3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG30N60B3_NL Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTG30N60B3 vs HGTG30N60B3_NL
HGTG30N60B3 IGBT, 600V, PT, 450-TUBE onsemi HGTG30N60B3 vs HGTG30N60B3
HGTG30N60B3 600V, N-CHANNEL IGBT, TO-247, PLASTIC PACKAGE-3 Intersil Corporation HGTG30N60B3 vs HGTG30N60B3
Part Number Description Manufacturer Compare
IRG4BC30W Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG30N60B3 vs IRG4BC30W
IRG4BC30S Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG30N60B3 vs IRG4BC30S
HGTG30N60A4 600V, SMPS IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL Fairchild Semiconductor Corporation HGTG30N60B3 vs HGTG30N60A4
IRG4PC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG30N60B3 vs IRG4PC50U
HGTG11N120CND Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247, Fairchild Semiconductor Corporation HGTG30N60B3 vs HGTG11N120CND
IRG4PH50K Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AB, TO-247AB, 3 PIN International Rectifier HGTG30N60B3 vs IRG4PH50K
IRG4BC15UD-S Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier HGTG30N60B3 vs IRG4BC15UD-S
IRG4BC30UD Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG30N60B3 vs IRG4BC30UD
IRG4BC20U Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG30N60B3 vs IRG4BC20U
IRG4BC40K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG30N60B3 vs IRG4BC40K

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