Datasheets
HGTD3N60C3S by:

6A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252AA, 3 PIN

Part Details for HGTD3N60C3S by Intersil Corporation

Overview of HGTD3N60C3S by Intersil Corporation

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Applications Automotive

Part Details for HGTD3N60C3S

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HGTD3N60C3S Part Data Attributes:

HGTD3N60C3S Intersil Corporation
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HGTD3N60C3S Intersil Corporation 6A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252AA, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Part Package Code TO-252AA
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 275 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 33 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 455 ns
Turn-on Time-Nom (ton) 15 ns

Alternate Parts for HGTD3N60C3S

This table gives cross-reference parts and alternative options found for HGTD3N60C3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD3N60C3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTD3N60C3S Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation HGTD3N60C3S vs HGTD3N60C3S
HGTD3N60C3S9A 6A, 600V, N-CHANNEL IGBT, TO-252AA Intersil Corporation HGTD3N60C3S vs HGTD3N60C3S9A
Part Number Description Manufacturer Compare
IRG4RC10KTRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier HGTD3N60C3S vs IRG4RC10KTRPBF
SGD02N60BUMA1 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG HGTD3N60C3S vs SGD02N60BUMA1
SGD04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-252AA Siemens HGTD3N60C3S vs SGD04N60
HGTD3N60B3S9A 7A, 600V, N-CHANNEL IGBT, TO-252AA Intersil Corporation HGTD3N60C3S vs HGTD3N60B3S9A
HGTD3N60C3S9A 6A, 600V, N-CHANNEL IGBT, TO-252AA Intersil Corporation HGTD3N60C3S vs HGTD3N60C3S9A
IRG4RC10KTRRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier HGTD3N60C3S vs IRG4RC10KTRRPBF
HGTD3N60C3 HGTD3N60C3 Intersil Corporation HGTD3N60C3S vs HGTD3N60C3

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