Datasheets
SGD02N60BUMA1 by:

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3

Part Details for SGD02N60BUMA1 by Infineon Technologies AG

Overview of SGD02N60BUMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for SGD02N60BUMA1

Part # Distributor Description Stock Price Buy
Rochester Electronics SGD02N60 - Discrete IGBT without Anti-Parallel Diode RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 9502
  • 1 $0.6523
  • 25 $0.6393
  • 100 $0.6132
  • 500 $0.5871
  • 1,000 $0.5545
$0.5545 / $0.6523 Buy Now
DISTI # SP000011993
EBV Elektronik Trans IGBT Chip N-CH 600V 6A 3-Pin TO-252 T/R (Alt: SP000011993) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SGD02N60BUMA1

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SGD02N60BUMA1 Part Data Attributes

SGD02N60BUMA1 Infineon Technologies AG
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SGD02N60BUMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252AA
Package Description GREEN, PLASTIC, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Date Of Intro 1998-04-01
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 354 ns
Turn-on Time-Nom (ton) 34 ns

Alternate Parts for SGD02N60BUMA1

This table gives cross-reference parts and alternative options found for SGD02N60BUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGD02N60BUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTD3N60C3 HGTD3N60C3 Intersil Corporation SGD02N60BUMA1 vs HGTD3N60C3
HGTD3N60B3S 7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 Intersil Corporation SGD02N60BUMA1 vs HGTD3N60B3S
HGTD3N60C3S 6A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252AA, 3 PIN Intersil Corporation SGD02N60BUMA1 vs HGTD3N60C3S
IRG4RC10KTRLPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier SGD02N60BUMA1 vs IRG4RC10KTRLPBF
SGD04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-252AA Siemens SGD02N60BUMA1 vs SGD04N60
SGD02N60 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG SGD02N60BUMA1 vs SGD02N60
HGTD3N60B3S9A 7A, 600V, N-CHANNEL IGBT, TO-252AA Intersil Corporation SGD02N60BUMA1 vs HGTD3N60B3S9A

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