Datasheets
HGTD3N60B3S9A by:

7A, 600V, N-CHANNEL IGBT, TO-252AA

Part Details for HGTD3N60B3S9A by Intersil Corporation

Overview of HGTD3N60B3S9A by Intersil Corporation

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Applications Automotive

Part Details for HGTD3N60B3S9A

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HGTD3N60B3S9A Part Data Attributes

HGTD3N60B3S9A Intersil Corporation
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HGTD3N60B3S9A Intersil Corporation 7A, 600V, N-CHANNEL IGBT, TO-252AA
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 7 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 335 ns
Turn-on Time-Nom (ton) 34 ns

Alternate Parts for HGTD3N60B3S9A

This table gives cross-reference parts and alternative options found for HGTD3N60B3S9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD3N60B3S9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTD3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation HGTD3N60B3S9A vs HGTD3N60B3S
HGTD3N60B3S 7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 Intersil Corporation HGTD3N60B3S9A vs HGTD3N60B3S
HGTD3N60B3S9A Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation HGTD3N60B3S9A vs HGTD3N60B3S9A
Part Number Description Manufacturer Compare
HGTD3N60C3 HGTD3N60C3 Intersil Corporation HGTD3N60B3S9A vs HGTD3N60C3
HGTD3N60B3S 7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 Intersil Corporation HGTD3N60B3S9A vs HGTD3N60B3S
HGTD3N60C3S 6A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252AA, 3 PIN Intersil Corporation HGTD3N60B3S9A vs HGTD3N60C3S
IRG4RC10KTRLPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier HGTD3N60B3S9A vs IRG4RC10KTRLPBF
SGD04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-252AA Siemens HGTD3N60B3S9A vs SGD04N60
SGD02N60 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG HGTD3N60B3S9A vs SGD02N60

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