Datasheets
HGT1S12N60C3DS by:

24A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263AB, 3 PIN

Part Details for HGT1S12N60C3DS by Intersil Corporation

Overview of HGT1S12N60C3DS by Intersil Corporation

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Part Details for HGT1S12N60C3DS

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HGT1S12N60C3DS Part Data Attributes

HGT1S12N60C3DS Intersil Corporation
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HGT1S12N60C3DS Intersil Corporation 24A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263AB, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 24 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 275 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 480 ns
Turn-on Time-Nom (ton) 48 ns

Alternate Parts for HGT1S12N60C3DS

This table gives cross-reference parts and alternative options found for HGT1S12N60C3DS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60C3DS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S12N60C3DS9A 24A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60C3DS vs HGT1S12N60C3DS9A
HGT1S12N60C3DS Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB Fairchild Semiconductor Corporation HGT1S12N60C3DS vs HGT1S12N60C3DS
Part Number Description Manufacturer Compare
HGTP10N120BN 35A, 1200V, N-CHANNEL IGBT, TO-220AB ALTERNATE VERSION, 3 PIN Intersil Corporation HGT1S12N60C3DS vs HGTP10N120BN
MGP14N60E 18A, 600V, N-CHANNEL IGBT, TO-220AB Motorola Mobility LLC HGT1S12N60C3DS vs MGP14N60E
HGTP3N60A4D 17A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGT1S12N60C3DS vs HGTP3N60A4D
HGTG30N60A4D Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGT1S12N60C3DS vs HGTG30N60A4D
SKW30N60 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG HGT1S12N60C3DS vs SKW30N60
IRG4IBC20UDPBF Insulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier HGT1S12N60C3DS vs IRG4IBC20UDPBF
HGT1S10N120BNS9A 35A, 1200V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60C3DS vs HGT1S10N120BNS9A
CT30SM-12 Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel Mitsubishi Electric HGT1S12N60C3DS vs CT30SM-12
HGTP1N120BN 5.3A, 1200V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGT1S12N60C3DS vs HGTP1N120BN
HGT1S10N120BNS 1200V, NPT IGBT, 2LD,TO263, SURFACE MOUNT, 800/RAIL Fairchild Semiconductor Corporation HGT1S12N60C3DS vs HGT1S10N120BNS

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