HGT1S12N60C3DS9A
Description: 24A, 600V, N-CHANNEL IGBT, TO-263AB

Overview of HGT1S12N60C3DS9A by Intersil Corporation

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Part Data Attributes for HGT1S12N60C3DS9A by Intersil Corporation

HGT1S12N60C3DS9A
Intersil Corporation
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
24 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
480 ns
Turn-on Time-Nom (ton)
48 ns
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  1. HGT1S12N60C3DS9A
    Intersil Corporation
    24A, 600V, N-CHANNEL IGBT, TO-263AB
    VS

Alternate Parts for HGT1S12N60C3DS9A

This table gives cross-reference parts and alternative options found for HGT1S12N60C3DS9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60C3DS9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HGT1S12N60C3DS9A Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB Fairchild Semiconductor Corporation HGT1S12N60C3DS9A vs HGT1S12N60C3DS9A
Part Number Description Manufacturer Compare
HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode, 450-TUBE onsemi HGT1S12N60C3DS9A vs HGTG12N60C3D
IRG4BC20FPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGT1S12N60C3DS9A vs IRG4BC20FPBF
IRG4PC40FPBF Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGT1S12N60C3DS9A vs IRG4PC40FPBF
IRG4BC20SDPBF Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HGT1S12N60C3DS9A vs IRG4BC20SDPBF
SKW25N120 Insulated Gate Bipolar Transistor, 46A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG HGT1S12N60C3DS9A vs SKW25N120
SGB10N60 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-263AB Siemens HGT1S12N60C3DS9A vs SGB10N60
IRGP20B120U-EPBF Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN International Rectifier HGT1S12N60C3DS9A vs IRGP20B120U-EPBF
IRG4BC10KDPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HGT1S12N60C3DS9A vs IRG4BC10KDPBF
IRGPS40B120UPBF Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN International Rectifier HGT1S12N60C3DS9A vs IRGPS40B120UPBF
HGT1S12N60B3S 27A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 Intersil Corporation HGT1S12N60C3DS9A vs HGT1S12N60B3S

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