Datasheets
HGT1S12N60C3DS9A by:

24A, 600V, N-CHANNEL IGBT, TO-263AB

Part Details for HGT1S12N60C3DS9A by Intersil Corporation

Overview of HGT1S12N60C3DS9A by Intersil Corporation

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Part Details for HGT1S12N60C3DS9A

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HGT1S12N60C3DS9A Part Data Attributes

HGT1S12N60C3DS9A Intersil Corporation
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HGT1S12N60C3DS9A Intersil Corporation 24A, 600V, N-CHANNEL IGBT, TO-263AB
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 24 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 480 ns
Turn-on Time-Nom (ton) 48 ns

Alternate Parts for HGT1S12N60C3DS9A

This table gives cross-reference parts and alternative options found for HGT1S12N60C3DS9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60C3DS9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S12N60C3DS9A Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB Fairchild Semiconductor Corporation HGT1S12N60C3DS9A vs HGT1S12N60C3DS9A
Part Number Description Manufacturer Compare
HGT1S12N60B3DS 27A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60C3DS9A vs HGT1S12N60B3DS
HGTG10N120BN 35A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S12N60C3DS9A vs HGTG10N120BN
GT8J102SM TRANSISTOR 8 A, 600 V, N-CHANNEL IGBT, TO-220, TO-220SM, 2 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components HGT1S12N60C3DS9A vs GT8J102SM
HGTP3N60A4D Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, Fairchild Semiconductor Corporation HGT1S12N60C3DS9A vs HGTP3N60A4D
IRG4PC50FDPBF Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGT1S12N60C3DS9A vs IRG4PC50FDPBF
SGB20N60 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB Siemens HGT1S12N60C3DS9A vs SGB20N60
HGT1S12N60B3S9A 27A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60C3DS9A vs HGT1S12N60B3S9A
HGT1S7N60A4S 34A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60C3DS9A vs HGT1S7N60A4S
IRG4BC30UDPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGT1S12N60C3DS9A vs IRG4BC30UDPBF
MGY25N120 38A, 1200V, N-CHANNEL IGBT, TO-264, TO-264, 3 PIN Motorola Mobility LLC HGT1S12N60C3DS9A vs MGY25N120

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