HGT1S10N120BNS9A
Description: 35A, 1200V, N-CHANNEL IGBT, TO-263AB

Overview of HGT1S10N120BNS9A by Intersil Corporation

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Part Data Attributes for HGT1S10N120BNS9A by Intersil Corporation

HGT1S10N120BNS9A
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
35 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SINGLE
Fall Time-Max (tf)
140 ns
Gate-Emitter Thr Voltage-Max
6.8 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
198 W
Qualification Status
Not Qualified
Rise Time-Max (tr)
15 ns
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
330 ns
Turn-on Time-Nom (ton)
32 ns
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  1. HGT1S10N120BNS9A
    Intersil Corporation
    35A, 1200V, N-CHANNEL IGBT, TO-263AB
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Alternate Parts for HGT1S10N120BNS9A

This table gives cross-reference parts and alternative options found for HGT1S10N120BNS9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S10N120BNS9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HGT1S10N120BNST Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HGT1S10N120BNS9A vs HGT1S10N120BNST
HGT1S10N120BNS 35A, 1200V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S10N120BNS9A vs HGT1S10N120BNS
Part Number Description Manufacturer Compare
HGTG12N60C3D 24A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S10N120BNS9A vs HGTG12N60C3D
HGTP7N60A4 34A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGT1S10N120BNS9A vs HGTP7N60A4
IRG4PC50KDPBF Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGT1S10N120BNS9A vs IRG4PC50KDPBF
HGTP12N60C3R 24A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGT1S10N120BNS9A vs HGTP12N60C3R
HGTG7N60A4 34A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S10N120BNS9A vs HGTG7N60A4
HGTG20N60A4 70A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S10N120BNS9A vs HGTG20N60A4
MGY25N120D 38A, 1200V, N-CHANNEL IGBT, TO-264AA, TO-264, 3 PIN Motorola Mobility LLC HGT1S10N120BNS9A vs MGY25N120D
MGP11N60E 15A, 600V, N-CHANNEL IGBT, TO-220AB Motorola Mobility LLC HGT1S10N120BNS9A vs MGP11N60E
IRG4PH40KDPBF Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGT1S10N120BNS9A vs IRG4PH40KDPBF
HGTG40N60C3R 75A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S10N120BNS9A vs HGTG40N60C3R

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