Part Details for GS8162Z18DD-250V by GSI Technology
Overview of GS8162Z18DD-250V by GSI Technology
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for GS8162Z18DD-250V
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
GS8162Z18DD-250V
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Avnet Americas | SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5.5ns/3ns 165-Pin FBGA - Bulk (Alt: GS8162Z18DD-250V) RoHS: Not Compliant Min Qty: 144 Package Multiple: 144 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
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$28.3812 / $34.9470 | Buy Now |
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DISTI #
464-GS8162Z18DD-250V
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Mouser Electronics | SRAM 1.8/2.5V 1M x 18 18M RoHS: Not Compliant | 0 |
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$29.3200 / $37.4600 | Order Now |
Part Details for GS8162Z18DD-250V
GS8162Z18DD-250V CAD Models
GS8162Z18DD-250V Part Data Attributes
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GS8162Z18DD-250V
GSI Technology
Buy Now
Datasheet
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Compare Parts:
GS8162Z18DD-250V
GSI Technology
ZBT SRAM, 1MX18, 5.5ns, CMOS, PBGA165, FPBGA-165
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GSI TECHNOLOGY | |
| Part Package Code | BGA | |
| Package Description | LBGA, | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.B | |
| HTS Code | 8542.32.00.41 | |
| Factory Lead Time | 24 Weeks | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | |
| JESD-30 Code | R-PBGA-B165 | |
| Length | 15 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | ZBT SRAM | |
| Memory Width | 18 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX18 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Supply Voltage-Max (Vsup) | 2 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 13 mm |
Alternate Parts for GS8162Z18DD-250V
This table gives cross-reference parts and alternative options found for GS8162Z18DD-250V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8162Z18DD-250V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K7M163645A-FC200 | ZBT SRAM, 512KX36, CMOS, PBGA165, FBGA-165 | Samsung Semiconductor | GS8162Z18DD-250V vs K7M163645A-FC200 |
| GS8161E36DD-150 | Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, FPBGA-165 | GSI Technology | GS8162Z18DD-250V vs GS8161E36DD-150 |
| GS8161E36DGT-333V | Cache SRAM, 512KX36, 5ns, CMOS, PQFP100, TQFP-100 | GSI Technology | GS8162Z18DD-250V vs GS8161E36DGT-333V |
| R1Q3A3618ABG-60R | IC,SYNC SRAM,QDR,2MX18,CMOS,BGA,165PIN,PLASTIC | Renesas Electronics Corporation | GS8162Z18DD-250V vs R1Q3A3618ABG-60R |
| IS61VF51236A-7.5TQVI | 512KX36 CACHE SRAM, 7.5ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100 | Integrated Silicon Solution Inc | GS8162Z18DD-250V vs IS61VF51236A-7.5TQVI |
| CY7C1163KV18-550BZC | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | Infineon Technologies AG | GS8162Z18DD-250V vs CY7C1163KV18-550BZC |
| GS8182D37BD-435MT | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8162Z18DD-250V vs GS8182D37BD-435MT |
| GS8162Z18DD-250IT | ZBT SRAM, 1MX18, 5.5ns, CMOS, PBGA165, FPBGA-165 | GSI Technology | GS8162Z18DD-250V vs GS8162Z18DD-250IT |
| K7M161845A-FC160 | ZBT SRAM, 1MX18, CMOS, PBGA165, FBGA-165 | Samsung Semiconductor | GS8162Z18DD-250V vs K7M161845A-FC160 |
| CY7C1314KV18-300BZXC | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | GS8162Z18DD-250V vs CY7C1314KV18-300BZXC |