Datasheets
FQB5N60C by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

Part Details for FQB5N60C by Fairchild Semiconductor Corporation

Overview of FQB5N60C by Fairchild Semiconductor Corporation

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Part Details for FQB5N60C

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FQB5N60C Part Data Attributes:

FQB5N60C Fairchild Semiconductor Corporation
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FQB5N60C Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB5N60C

This table gives cross-reference parts and alternative options found for FQB5N60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB5N60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB3NK60ZT4 N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in D2PAK package STMicroelectronics FQB5N60C vs STB3NK60ZT4
FQB7N60 Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB5N60C vs FQB7N60
IRFBC40STRLPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FQB5N60C vs IRFBC40STRLPBF
IRFBC20SPBF Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FQB5N60C vs IRFBC20SPBF
FQB7N60TM_WS N-Channel QFET® MOSFET 600V, 7.4A, 1Ω, TO-263 2L (D2PAK), 6400-TAPE REEL onsemi FQB5N60C vs FQB7N60TM_WS
FQB8N60CTM Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation FQB5N60C vs FQB8N60CTM
STB3NB60T4 3.3A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 STMicroelectronics FQB5N60C vs STB3NB60T4
2SK3322-ZJ 5.5A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN Renesas Electronics Corporation FQB5N60C vs 2SK3322-ZJ
SSW2N60B Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB5N60C vs SSW2N60B
STB9NK60ZT4 N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package STMicroelectronics FQB5N60C vs STB9NK60ZT4

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