Part Details for STB3NK60ZT4 by STMicroelectronics
Overview of STB3NK60ZT4 by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STB3NK60ZT4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-STB3NK60ZT4CT-ND
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DigiKey | MOSFET N-CH 600V 2.4A D2PAK Min Qty: 1 Lead time: 54 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3064 In Stock |
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$0.3237 / $0.8600 | Buy Now |
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DISTI #
511-STB3NK60Z
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Mouser Electronics | MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH RoHS: Compliant | 0 |
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Order Now | |
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ComSIT USA | N-CHANNEL 600 V-3.3 OHM-2.4 A D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2000 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 600V 2.4A D2PAK | 12000 |
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RFQ |
Part Details for STB3NK60ZT4
STB3NK60ZT4 CAD Models
STB3NK60ZT4 Part Data Attributes
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STB3NK60ZT4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB3NK60ZT4
STMicroelectronics
N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1980-01-04 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 2.4 A | |
| Drain-source On Resistance-Max | 3.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 9.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB3NK60ZT4
This table gives cross-reference parts and alternative options found for STB3NK60ZT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB3NK60ZT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB7N60TM | Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, D2PAK, 800-REEL | onsemi | STB3NK60ZT4 vs FQB7N60TM |
| FQB10N60C | Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | STB3NK60ZT4 vs FQB10N60C |
| FQB6N60TM | 6.2A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | STB3NK60ZT4 vs FQB6N60TM |
| NTB10N60 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | Rochester Electronics LLC | STB3NK60ZT4 vs NTB10N60 |
| FQB4N60TM | Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STB3NK60ZT4 vs FQB4N60TM |
| FQB3N60 | Power Field-Effect Transistor, 3A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STB3NK60ZT4 vs FQB3N60 |
| FQB7N60TM_WS | N-Channel QFET® MOSFET 600V, 7.4A, 1Ω, TO-263 2L (D2PAK), 6400-TAPE REEL | onsemi | STB3NK60ZT4 vs FQB7N60TM_WS |
| IRFBC40S | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | STB3NK60ZT4 vs IRFBC40S |
| 2SK3889-01S | Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | STB3NK60ZT4 vs 2SK3889-01S |
| FQB3N60TM | Power Field-Effect Transistor, 3A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STB3NK60ZT4 vs FQB3N60TM |