Part Details for FQB8N60CTM by Fairchild Semiconductor Corporation
Overview of FQB8N60CTM by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQB8N60CTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 470 |
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RFQ | ||
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Quest Components | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET | 376 |
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$1.8800 / $3.0486 | Buy Now |
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Chip1Cloud | MOSFET N-CH 600V 7.5A | 4010 |
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RFQ |
Part Details for FQB8N60CTM
FQB8N60CTM CAD Models
FQB8N60CTM Part Data Attributes
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FQB8N60CTM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQB8N60CTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, D2PAK-3 | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7.5 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 147 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB8N60CTM
This table gives cross-reference parts and alternative options found for FQB8N60CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB8N60CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB8N60C | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FQB8N60CTM vs FQB8N60C |
| FQB8N60C | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | FQB8N60CTM vs FQB8N60C |
| FQB8N60CTM | Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, D2PAK, 800-REEL | onsemi | FQB8N60CTM vs FQB8N60CTM |