Datasheets
FQB20N06L by:

Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Part Details for FQB20N06L by Fairchild Semiconductor Corporation

Overview of FQB20N06L by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for FQB20N06L

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FQB20N06L Part Data Attributes:

FQB20N06L Fairchild Semiconductor Corporation
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FQB20N06L Fairchild Semiconductor Corporation Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-263
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 170 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 53 W
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB20N06L

This table gives cross-reference parts and alternative options found for FQB20N06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB20N06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHB20N06T TRANSISTOR 20.3 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors FQB20N06L vs PHB20N06T
PHB20N06T,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia FQB20N06L vs PHB20N06T,118
934056615118 Power Field-Effect Transistor Nexperia FQB20N06L vs 934056615118
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens FQB20N06L vs BUZ71L
MTD2N40E-T4 Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products FQB20N06L vs MTD2N40E-T4
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor FQB20N06L vs HUF75321D3S
2SK2412 20A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN Renesas Electronics Corporation FQB20N06L vs 2SK2412
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG FQB20N06L vs IRFZ24N
BUK7575-55A Power Field-Effect Transistor Nexperia FQB20N06L vs BUK7575-55A
PHB20N06T,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia FQB20N06L vs PHB20N06T,118
MTD2N40E-T4 2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC FQB20N06L vs MTD2N40E-T4
MTD3055ET4 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC FQB20N06L vs MTD3055ET4
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor FQB20N06L vs BUZ71

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