Datasheets
FDS8928A by:

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for FDS8928A by Fairchild Semiconductor Corporation

Overview of FDS8928A by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDS8928A

Part # Distributor Description Stock Price Buy
Bristol Electronics   688
RFQ
Bristol Electronics   Min Qty: 5 72
  • 5 $1.2375
  • 18 $0.8044
  • 64 $0.4641
$0.4641 / $1.2375 Buy Now
Quest Components MOSFET Transistor, Pair, Complementary, SO 4
  • 1 $1.1994
  • 5 $0.9995
$0.9995 / $1.1994 Buy Now
Quest Components MOSFET Transistor, Pair, Complementary, SO 57
  • 1 $1.6500
  • 4 $1.3200
  • 16 $0.8250
$0.8250 / $1.6500 Buy Now
Quest Components MOSFET Transistor, Pair, Complementary, SO 550
  • 1 $3.2700
  • 116 $2.0165
  • 497 $1.7985
$1.7985 / $3.2700 Buy Now
Win Source Electronics MOSFET N/P-CH 30V/20V 8SOIC 1810
  • 120 $0.4240
  • 290 $0.3480
  • 450 $0.3370
  • 615 $0.3270
  • 795 $0.3160
  • 1,065 $0.2830
$0.2830 / $0.4240 Buy Now

Part Details for FDS8928A

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FDS8928A Part Data Attributes:

FDS8928A Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDS8928A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SOIC-8
Pin Count 8
Manufacturer Package Code 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS8928A

This table gives cross-reference parts and alternative options found for FDS8928A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8928A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor, 2500-REEL onsemi FDS8928A vs FDS8928A
FDS8928A 5.5A, 30V, 0.03ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC FDS8928A vs FDS8928A
Part Number Description Manufacturer Compare
FDS9934C 6.5A, 20V, 0.03ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC FDS8928A vs FDS9934C
FDS9934C_NL Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS8928A vs FDS9934C_NL
IRF7307TRPBF Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier FDS8928A vs IRF7307TRPBF
RF1K4909296 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation FDS8928A vs RF1K4909296
RF1K49092 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation FDS8928A vs RF1K49092
FDS8928A 5.5A, 30V, 0.03ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC FDS8928A vs FDS8928A
FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor, 2500-REEL onsemi FDS8928A vs FDS8928A
FDS9934C Complementary PowerTrench® MOSFET 20V, 2500-REEL onsemi FDS8928A vs FDS9934C
RF1K4909296 3.5A, 12V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA Rochester Electronics LLC FDS8928A vs RF1K4909296
RF1K49092 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor FDS8928A vs RF1K49092

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