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Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TEMPFET Transistor, N-CHAN, TO-220AB | 7 |
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$3.0000 / $6.0000 | Buy Now |
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ComSIT USA | TEMPFET Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 87000 |
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BTS110
Infineon Technologies AG
Buy Now
Datasheet
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BTS110
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BTS110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BTS110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BTS121A-E3045 | 22A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN | Siemens | BTS110 vs BTS121A-E3045 |
BTS120 | Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | BTS110 vs BTS120 |
BTS115A-E3045 | 15.5A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN | Siemens | BTS110 vs BTS115A-E3045 |
BTS130-E3045 | 27A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN | Siemens | BTS110 vs BTS130-E3045 |
BTS115AE3045 | Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Siemens | BTS110 vs BTS115AE3045 |
BTS121AE3045 | Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | Siemens | BTS110 vs BTS121AE3045 |
BTS113A | 11.5A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | BTS110 vs BTS113A |
BTS130-E3045 | 27A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN | Infineon Technologies AG | BTS110 vs BTS130-E3045 |
BTS113AE3045A | Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | BTS110 vs BTS113AE3045A |
BTS113AE3045A | Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN | Infineon Technologies AG | BTS110 vs BTS113AE3045A |