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Transistors Power Field-Effect Transistors BTS113A

BTS113A
Description: 11.5A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Overview of BTS113A by Rochester Electronics LLC

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Part Data Attributes for BTS113A by Rochester Electronics LLC
Parametric Data

BTS113A
Rochester Electronics LLC
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
Additional Feature
LOGIC LEVEL COMPATIBLE
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
11.5 A
Drain-source On Resistance-Max
0.17 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
46 A
Qualification Status
COMMERCIAL
Surface Mount
NO
Terminal Finish
NOT SPECIFIED
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. BTS113A
    Rochester Electronics LLC
    11.5A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    VS

Alternate Parts for BTS113A

This table gives cross-reference parts and alternative options found for BTS113A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BTS113A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BTS113A Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BTS113A vs BTS113A
Part Number Description Manufacturer Compare
BTS120 Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BTS113A vs BTS120
BTS120 Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Infineon Technologies AG BTS113A vs BTS120
BTS110 Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG BTS113A vs BTS110
BTS115AE3045 Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN Siemens BTS113A vs BTS115AE3045
BTS130E3045 Power Field-Effect Transistor, 27A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN Infineon Technologies AG BTS113A vs BTS130E3045
BTS115AE3045 Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB SMD VERSION, 3 PIN Infineon Technologies AG BTS113A vs BTS115AE3045
BTS115A-E3045 15.5A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN Siemens BTS113A vs BTS115A-E3045
BTS121AE3045 Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN Siemens BTS113A vs BTS121AE3045
BTS130-E3045 27A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN Siemens BTS113A vs BTS130-E3045
BTS121A-E3045 22A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN Siemens BTS113A vs BTS121A-E3045

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