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Transistors / Power Field-Effect Transistors / BTS110
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BTS110 by:

Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for BTS110 by Infineon Technologies AG

Overview of BTS110 by Infineon Technologies AG

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Price & Stock for BTS110

Part # Distributor Description Stock Price Buy
Quest Components TEMPFET Transistor, N-CHAN, TO-220AB 7
  • 1 $6.0000
  • 3 $4.0000
  • 7 $3.0000
$3.0000 / $6.0000 Buy Now
ComSIT USA TEMPFET Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Europe - 87000
RFQ

Part Details for BTS110

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BTS110 Part Data Attributes

Parametric Data
BTS110 Infineon Technologies AG
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BTS110 Infineon Technologies AG Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for BTS110

This table gives cross-reference parts and alternative options found for BTS110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BTS110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BTS121A-E3045 22A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN Siemens BTS110 vs BTS121A-E3045
BTS120 Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BTS110 vs BTS120
BTS115A-E3045 15.5A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN Siemens BTS110 vs BTS115A-E3045
BTS130-E3045 27A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN Siemens BTS110 vs BTS130-E3045
BTS115AE3045 Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN Siemens BTS110 vs BTS115AE3045
BTS121AE3045 Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN Siemens BTS110 vs BTS121AE3045
BTS113A 11.5A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BTS110 vs BTS113A
BTS130-E3045 27A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN Infineon Technologies AG BTS110 vs BTS130-E3045
BTS113AE3045A Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BTS110 vs BTS113AE3045A
BTS113AE3045A Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN Infineon Technologies AG BTS110 vs BTS113AE3045A

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