Part Details for BSZ0904NSIATMA1 by Infineon Technologies AG
Overview of BSZ0904NSIATMA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for BSZ0904NSIATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50Y1836
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Newark | Mosfet, N-Ch, 30V, 40A, Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Qualification:-Rohs Compliant: Yes |Infineon BSZ0904NSIATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 270 |
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$0.2520 | Buy Now |
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DISTI #
86AK4592
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Newark | Mosfet, N-Ch, 30V, 40A, Tsdson Rohs Compliant: Yes |Infineon BSZ0904NSIATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4130 | Buy Now |
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DISTI #
BSZ0904NSIATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 18A/40A TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
10399 In Stock |
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$0.3605 / $0.9600 | Buy Now |
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DISTI #
50Y1836
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Avnet Americas | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 50Y1836) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 274 Partner Stock |
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$0.6230 / $0.9880 | Buy Now |
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DISTI #
BSZ0904NSIATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ0904NSIATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.3364 / $0.3845 | Buy Now |
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DISTI #
726-BSZ0904NSIATMA1
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Mouser Electronics | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS RoHS: Compliant | 16472 |
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$0.3600 / $0.9600 | Buy Now |
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Future Electronics | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 10000Reel |
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$0.1850 / $0.1970 | Buy Now |
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Future Electronics | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 10000Reel |
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$0.1850 / $0.1970 | Buy Now |
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DISTI #
76473038
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Verical | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2351 | Americas - 5000 |
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$0.3203 | Buy Now |
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DISTI #
71241284
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Verical | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R Min Qty: 39 Package Multiple: 1 Date Code: 2333 | Americas - 2440 |
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$0.4963 / $0.8175 | Buy Now |
Part Details for BSZ0904NSIATMA1
BSZ0904NSIATMA1 CAD Models
BSZ0904NSIATMA1 Part Data Attributes
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BSZ0904NSIATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ0904NSIATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-N3 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.0057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSZ0904NSIATMA1
This table gives cross-reference parts and alternative options found for BSZ0904NSIATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ0904NSIATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RQ3E180GNTB | Power Field-Effect Transistor, 18A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN | ROHM Semiconductor | BSZ0904NSIATMA1 vs RQ3E180GNTB |
| NTTFS4985NFTWG | 16.3A, 30V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, ROHS COMPLIANT, CASE 511AB, WDFN-8 | onsemi | BSZ0904NSIATMA1 vs NTTFS4985NFTWG |
| NTMFS4985NFT3G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | BSZ0904NSIATMA1 vs NTMFS4985NFT3G |
| BSZ0904NSI | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSZ0904NSIATMA1 vs BSZ0904NSI |
| FDS7068SN3 | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | BSZ0904NSIATMA1 vs FDS7068SN3 |
| FDMS8672S | Power Field-Effect Transistor, 17A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | BSZ0904NSIATMA1 vs FDMS8672S |