Part Details for NTTFS4985NFTWG by onsemi
Overview of NTTFS4985NFTWG by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTTFS4985NFTWG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68Y0623
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Newark | Nfet U8Fl 30V 64A 5.2Mohm/Reel |Onsemi NTTFS4985NFTWG Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Quest Components | 2428 |
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$0.3675 / $1.0500 | Buy Now | |
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Rochester Electronics | NTTFS4985 - Power Field-Effect Transistor, 16.3A, 30V, 0.0052ohm, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 24000 |
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$0.5162 / $0.6073 | Buy Now |
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Chip 1 Exchange | INSTOCK | 6188 |
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RFQ | |
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DISTI #
4281005
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Farnell | MISCELLANEOUS MOSFETS RoHS: Compliant Min Qty: 5000 Lead time: 3 Weeks, 1 Days Container: Each | 24000 |
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$0.6092 | Buy Now |
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Wuhan P&S | 30V,3.5m��,64A,Single N-Ch Power MOSFET Min Qty: 1 | 4760 |
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$0.6700 / $1.3900 | Buy Now |
Part Details for NTTFS4985NFTWG
NTTFS4985NFTWG CAD Models
NTTFS4985NFTWG Part Data Attributes:
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NTTFS4985NFTWG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTTFS4985NFTWG
onsemi
16.3A, 30V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, ROHS COMPLIANT, CASE 511AB, WDFN-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN | |
| Package Description | 3.30 X 3.30 MM, ROHS COMPLIANT, CASE 511AB, WDFN-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 511AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 52 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 16.3 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 22.73 W | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTTFS4985NFTWG
This table gives cross-reference parts and alternative options found for NTTFS4985NFTWG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTTFS4985NFTWG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS7064A | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BOTTOMLESS, SO-8 | Fairchild Semiconductor Corporation | NTTFS4985NFTWG vs FDS7064A |
| NTTFS4985NFTAG | Single N-Channel Power MOSFET 30V, 64A, 3.5mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL | onsemi | NTTFS4985NFTWG vs NTTFS4985NFTAG |
| BSF045N03MQ3G | Power Field-Effect Transistor, 18A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2 | Infineon Technologies AG | NTTFS4985NFTWG vs BSF045N03MQ3G |
| BSB053N03LPG | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | Infineon Technologies AG | NTTFS4985NFTWG vs BSB053N03LPG |
| NTMFS4985NFT3G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | NTTFS4985NFTWG vs NTMFS4985NFT3G |
| NTMFS4985NFT1G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL | onsemi | NTTFS4985NFTWG vs NTMFS4985NFT1G |
| FDMS8672S | Power Field-Effect Transistor, 17A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | NTTFS4985NFTWG vs FDMS8672S |
| BSZ0904NSI | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | NTTFS4985NFTWG vs BSZ0904NSI |
| FDS7068SN3 | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | NTTFS4985NFTWG vs FDS7068SN3 |
| BSZ0589NSATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8 | Infineon Technologies AG | NTTFS4985NFTWG vs BSZ0589NSATMA1 |