Datasheets
BSP125 by:

Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN

Part Details for BSP125 by Infineon Technologies AG

Overview of BSP125 by Infineon Technologies AG

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Applications Energy and Power Systems Healthcare Renewable Energy Automotive

Price & Stock for BSP125

Part # Distributor Description Stock Price Buy
DISTI # 1214278RL
element14 Asia-Pacific MOSFET, N, SOT-223 RoHS: Compliant Min Qty: 10 Container: Reel 0
  • 10 $0.5108
  • 100 $0.4146
  • 500 $0.3537
  • 1,000 $0.2965
  • 5,000 $0.2781
$0.2781 / $0.5108 Buy Now
DISTI # 1214278
element14 Asia-Pacific MOSFET, N, SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $0.6179
  • 10 $0.5108
  • 100 $0.4146
  • 500 $0.3537
  • 1,000 $0.2965
  • 5,000 $0.2781
$0.2781 / $0.6179 Buy Now
DISTI # 1214278RL
Farnell MOSFET, N, SOT-223 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Reel 0
  • 1 $0.5570
  • 100 $0.4683
  • 200 $0.2760
  • 500 $0.2697
  • 1,000 $0.2647
  • 2,000 $0.2585
  • 4,000 $0.2535
  • 20,000 $0.2473
$0.2473 / $0.5570 Buy Now
DISTI # 1214278
Farnell MOSFET, N, SOT-223 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Cut Tape 0
  • 1 $0.5570
  • 100 $0.4683
  • 200 $0.2760
  • 500 $0.2697
  • 1,000 $0.2647
  • 2,000 $0.2585
  • 4,000 $0.2535
  • 20,000 $0.2473
$0.2473 / $0.5570 Buy Now

Part Details for BSP125

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BSP125 Part Data Attributes

BSP125 Infineon Technologies AG
Buy Now Datasheet
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BSP125 Infineon Technologies AG Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT-223
Package Description SOT-223, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.12 A
Drain-source On Resistance-Max 45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Pulsed Drain Current-Max (IDM) 0.48 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSP125

This table gives cross-reference parts and alternative options found for BSP125. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP125, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP125 Power Field-Effect Transistor, 0.11A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP125 vs BSP125
Part Number Description Manufacturer Compare
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Infineon Technologies AG BSP125 vs BSP129E-6327
BSP129E7941 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP125 vs BSP129E7941
BSP88 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG BSP125 vs BSP88
BSP88 Power Field-Effect Transistor, 0.29A I(D), 240V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP125 vs BSP88
BSP300E6327 Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP125 vs BSP300E6327
BSP125 Power Field-Effect Transistor, 0.11A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP125 vs BSP125
BSP135E6327 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP125 vs BSP135E6327
BSP135L6327 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP125 vs BSP135L6327
BSP300L6327 Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP125 vs BSP300L6327
BSP135E6906 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP125 vs BSP135E6906

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