Part Details for BSP125 by Siemens
Overview of BSP125 by Siemens
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Healthcare
Renewable Energy
Automotive
Price & Stock for BSP125
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | SIPMOS Small-Signal Transistor (N channel Enhancement mode) | 30000 |
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RFQ |
Part Details for BSP125
BSP125 CAD Models
BSP125 Part Data Attributes:
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BSP125
Siemens
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Datasheet
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BSP125
Siemens
Power Field-Effect Transistor, 0.11A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.11 A | |
| Drain-source On Resistance-Max | 45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.7 W | |
| Pulsed Drain Current-Max (IDM) | 0.44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 50 ns | |
| Turn-on Time-Max (ton) | 23 ns |
Alternate Parts for BSP125
This table gives cross-reference parts and alternative options found for BSP125. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP125, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP88L6327 | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP125 vs BSP88L6327 |
| BSP135E-6327 | 0.1A, 600V, 60ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | Siemens | BSP125 vs BSP135E-6327 |
| BSP88 | Power Field-Effect Transistor, 0.29A I(D), 240V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP125 vs BSP88 |
| BSP129E7941 | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | BSP125 vs BSP129E7941 |
| BSP129E-6327 | 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | Siemens | BSP125 vs BSP129E-6327 |
| BSP300L6327 | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP125 vs BSP300L6327 |
| BSP135E6906 | Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP125 vs BSP135E6906 |
| BSP129 | Power Field-Effect Transistor, 0.19A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP125 vs BSP129 |
| BSP129E6327 | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP125 vs BSP129E6327 |
| BSP135L6906 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP125 vs BSP135L6906 |