Datasheets
BSP129E-6327 by:

0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN

Part Details for BSP129E-6327 by Infineon Technologies AG

Overview of BSP129E-6327 by Infineon Technologies AG

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Part Details for BSP129E-6327

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BSP129E-6327 Part Data Attributes:

BSP129E-6327 Infineon Technologies AG
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BSP129E-6327 Infineon Technologies AG 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT-223
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 240 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 20 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for BSP129E-6327

This table gives cross-reference parts and alternative options found for BSP129E-6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP129E-6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP129E6327 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129E-6327 vs BSP129E6327
BSP129 Power Field-Effect Transistor, 0.19A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP129E-6327 vs BSP129
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP129E-6327 vs BSP129E-6327
BSP129E6327 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP129E-6327 vs BSP129E6327
BSP129E7941 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129E-6327 vs BSP129E7941
BSP129L6906 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129E-6327 vs BSP129L6906
BSP129 Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129E-6327 vs BSP129
Part Number Description Manufacturer Compare
BSP88L6327 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129E-6327 vs BSP88L6327
BSP135E-6327 0.1A, 600V, 60ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP129E-6327 vs BSP135E-6327
BSP88 Power Field-Effect Transistor, 0.29A I(D), 240V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP129E-6327 vs BSP88
BSP129E7941 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129E-6327 vs BSP129E7941
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP129E-6327 vs BSP129E-6327
BSP300L6327 Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129E-6327 vs BSP300L6327
BSP135E6906 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129E-6327 vs BSP135E6906
BSP129 Power Field-Effect Transistor, 0.19A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP129E-6327 vs BSP129
BSP129E6327 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129E-6327 vs BSP129E6327
BSP125 Power Field-Effect Transistor, 0.11A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129E-6327 vs BSP125

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