Part Details for BSM100GB120DLC by Infineon Technologies AG
Overview of BSM100GB120DLC by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM100GB120DLC
BSM100GB120DLC CAD Models
BSM100GB120DLC Part Data Attributes:
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BSM100GB120DLC
Infineon Technologies AG
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Datasheet
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BSM100GB120DLC
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 780 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 650 ns | |
| Turn-on Time-Nom (ton) | 190 ns | |
| VCEsat-Max | 2.6 V |
Alternate Parts for BSM100GB120DLC
This table gives cross-reference parts and alternative options found for BSM100GB120DLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GB120DLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 1MBI200NA-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M130, 5 PIN | Fuji Electric Co Ltd | BSM100GB120DLC vs 1MBI200NA-120 |
| 2MBI200NB-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | BSM100GB120DLC vs 2MBI200NB-120 |
| 2MBI200VB-120-50 | Insulated Gate Bipolar Transistor | Fuji Electric Co Ltd | BSM100GB120DLC vs 2MBI200VB-120-50 |
| SKM200GB123D | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7 | SEMIKRON | BSM100GB120DLC vs SKM200GB123D |
| CM200DY-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | BSM100GB120DLC vs CM200DY-24H |
| CM200DY-24A | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | BSM100GB120DLC vs CM200DY-24A |
| 2MBI200L-060 | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN | Fuji Electric Co Ltd | BSM100GB120DLC vs 2MBI200L-060 |
| CM200DY-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | BSM100GB120DLC vs CM200DY-24H |
| 2MBI200LB-060 | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | BSM100GB120DLC vs 2MBI200LB-060 |
| 1MBI200F-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M116, 5 PIN | Fuji Electric Co Ltd | BSM100GB120DLC vs 1MBI200F-120 |