Part Details for 2MBI200VB-120-50 by Fuji Electric Co Ltd
Overview of 2MBI200VB-120-50 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Part Details for 2MBI200VB-120-50
2MBI200VB-120-50 CAD Models
2MBI200VB-120-50 Part Data Attributes
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2MBI200VB-120-50
Fuji Electric Co Ltd
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Datasheet
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2MBI200VB-120-50
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 800 ns | |
| Turn-on Time-Nom (ton) | 600 ns |
Alternate Parts for 2MBI200VB-120-50
This table gives cross-reference parts and alternative options found for 2MBI200VB-120-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2MBI200VB-120-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 1MBI200N-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | Fuji Electric Co Ltd | 2MBI200VB-120-50 vs 1MBI200N-120 |
| CM200DY-12H | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Powerex Power Semiconductors | 2MBI200VB-120-50 vs CM200DY-12H |
| MG200Q1US41 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI200VB-120-50 vs MG200Q1US41 |
| 2MBI150U4H-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 2MBI200VB-120-50 vs 2MBI150U4H-120 |
| CM200DY-24A | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | 2MBI200VB-120-50 vs CM200DY-24A |
| MG200N1US1 | TRANSISTOR 200 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI200VB-120-50 vs MG200N1US1 |
| CM200DU-24F | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | 2MBI200VB-120-50 vs CM200DU-24F |
| MG200J2YS40 | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI200VB-120-50 vs MG200J2YS40 |
| CM200HA-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Powerex Power Semiconductors | 2MBI200VB-120-50 vs CM200HA-24H |
| SKM200GB123D | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7 | SEMIKRON | 2MBI200VB-120-50 vs SKM200GB123D |