Part Details for CM200DY-24A by Mitsubishi Electric
Overview of CM200DY-24A by Mitsubishi Electric
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for CM200DY-24A
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K9214
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Newark | Igbt Module, 1.2Kv, 200A, Continuous Collector Current:200A, Collector Emitter Saturation Voltage:3V, Power Dissipation:1.34Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: No |Mitsubishi Electric CM200DY-24A Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
DISTI #
917-CM200DY-24A
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Mouser Electronics | IGBT Modules IGBT MODULE A-SERIES DUAL RoHS: Compliant | 23 |
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$151.6800 / $153.7000 | Buy Now |
Part Details for CM200DY-24A
CM200DY-24A CAD Models
CM200DY-24A Part Data Attributes
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CM200DY-24A
Mitsubishi Electric
Buy Now
Datasheet
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Compare Parts:
CM200DY-24A
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 200 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1340 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3 V |
Alternate Parts for CM200DY-24A
This table gives cross-reference parts and alternative options found for CM200DY-24A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM200DY-24A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
1MBI200N-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | Fuji Electric Co Ltd | CM200DY-24A vs 1MBI200N-120 |
CM200DY-12H | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Powerex Power Semiconductors | CM200DY-24A vs CM200DY-12H |
MG200Q1US41 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM200DY-24A vs MG200Q1US41 |
2MBI150U4H-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | CM200DY-24A vs 2MBI150U4H-120 |
MG200N1US1 | TRANSISTOR 200 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM200DY-24A vs MG200N1US1 |
CM200DU-24F | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | CM200DY-24A vs CM200DU-24F |
MG200J2YS40 | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM200DY-24A vs MG200J2YS40 |
CM200HA-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Powerex Power Semiconductors | CM200DY-24A vs CM200HA-24H |
SKM200GB123D | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7 | SEMIKRON | CM200DY-24A vs SKM200GB123D |
CM200DY-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | CM200DY-24A vs CM200DY-24H |