Part Details for 1MBI200F-120 by Fuji Electric Co Ltd
Overview of 1MBI200F-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 1MBI200F-120
1MBI200F-120 CAD Models
1MBI200F-120 Part Data Attributes
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1MBI200F-120
Fuji Electric Co Ltd
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Datasheet
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1MBI200F-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M116, 5 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Package Description | FLANGE MOUNT, R-XUFM-X5 | |
Pin Count | 5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Collector Current-Max (IC) | 200 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 1000 ns | |
JESD-30 Code | R-XUFM-X5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1440 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 2.5 V |
Alternate Parts for 1MBI200F-120
This table gives cross-reference parts and alternative options found for 1MBI200F-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI200F-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1MBI200N-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | Fuji Electric Co Ltd | 1MBI200F-120 vs 1MBI200N-120 |
CM200DY-12H | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Powerex Power Semiconductors | 1MBI200F-120 vs CM200DY-12H |
MG200Q1US41 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200F-120 vs MG200Q1US41 |
2MBI150U4H-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 1MBI200F-120 vs 2MBI150U4H-120 |
CM200DY-24A | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | 1MBI200F-120 vs CM200DY-24A |
MG200N1US1 | TRANSISTOR 200 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200F-120 vs MG200N1US1 |
CM200DU-24F | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | 1MBI200F-120 vs CM200DU-24F |
MG200J2YS40 | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200F-120 vs MG200J2YS40 |
CM200HA-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Powerex Power Semiconductors | 1MBI200F-120 vs CM200HA-24H |
SKM200GB123D | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7 | SEMIKRON | 1MBI200F-120 vs SKM200GB123D |