Datasheets
BLF246B by:

TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power

Part Details for BLF246B by NXP Semiconductors

Overview of BLF246B by NXP Semiconductors

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Applications Consumer Electronics

Part Details for BLF246B

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BLF246B Part Data Attributes:

BLF246B NXP Semiconductors
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BLF246B NXP Semiconductors TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-CDFM-F8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 130 W
Power Dissipation-Max (Abs) 130 W
Power Gain-Min (Gp) 14 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLF246B

This table gives cross-reference parts and alternative options found for BLF246B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF246B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLF246B,112 BLF246B NXP Semiconductors BLF246B vs BLF246B,112
934001090112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-8, FET RF Power NXP Semiconductors BLF246B vs 934001090112
Part Number Description Manufacturer Compare
MRF175GU 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity BLF246B vs MRF175GU
MRF275L UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 333-04, 6 PIN TE Connectivity BLF246B vs MRF275L
MRF175LU RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 333-04, 4 PIN MACOM BLF246B vs MRF175LU
UF28100M RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 MACOM BLF246B vs UF28100M
MRF275L UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 333-04, 6 PIN Motorola Mobility LLC BLF246B vs MRF275L
MRF175GU RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM BLF246B vs MRF175GU
UF28100V RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8 MACOM BLF246B vs UF28100V
MRF176GU 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity BLF246B vs MRF176GU
UF28150J 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT PACKAGE-4 TE Connectivity BLF246B vs UF28150J
UF28100M UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT PACKAGE-4 TE Connectivity BLF246B vs UF28100M

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