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N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26M3703
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Newark | Mosfet, N Channel, 900V, 5.8A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:900V, Continuous Drain Current Id:5.8A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STP6NK90Z Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 3190 |
|
$1.5600 / $3.6300 | Buy Now |
DISTI #
497-3199-5-ND
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DigiKey | MOSFET N-CH 900V 5.8A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
820 In Stock |
|
$1.4849 / $3.1800 | Buy Now |
DISTI #
STP6NK90Z
|
Avnet Americas | Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP6NK90Z) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 800 |
|
$1.3482 / $1.5341 | Buy Now |
DISTI #
511-STP6NK90Z
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Mouser Electronics | MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH RoHS: Compliant | 698 |
|
$1.4800 / $3.1800 | Buy Now |
DISTI #
E02:0323_00027106
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Arrow Electronics | Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2352 | Europe - 420 |
|
$0.6855 / $2.1291 | Buy Now |
DISTI #
E54:1762_12519415
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Arrow Electronics | Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2401 | Europe - 25 |
|
$0.7130 / $2.1453 | Buy Now |
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STMicroelectronics | N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 | 698 |
|
$1.8300 / $3.1200 | Buy Now |
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Future Electronics | N-Channel 900 V 2 Ω SuperMESH Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 2700Tube |
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$0.6650 / $0.7850 | Buy Now |
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Future Electronics | N-Channel 900 V 2 Ω SuperMESH Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
|
$1.4500 / $1.6000 | Buy Now |
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Future Electronics | N-Channel 900 V 2 Ω SuperMESH Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
|
$1.4500 / $1.6000 | Buy Now |
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STP6NK90Z
STMicroelectronics
Buy Now
Datasheet
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STP6NK90Z
STMicroelectronics
N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-220 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 5.8 A | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 23.2 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP6NK90Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP6NK90Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | STP6NK90Z vs F10F6N |
NDP606BE | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | STP6NK90Z vs NDP606BE |
STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | STP6NK90Z vs STP9NK65Z |
IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | STP6NK90Z vs IXFH12N100F |
IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | STP6NK90Z vs IPD90N06S306ATMA1 |
FQA30N40 | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | STP6NK90Z vs FQA30N40 |
SSP10N60B | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STP6NK90Z vs SSP10N60B |
BUK9614-30 | 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | STP6NK90Z vs BUK9614-30 |
FDP8878 | Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | STP6NK90Z vs FDP8878 |
FQPF6N80 | Power Field-Effect Transistor, 3.3A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | STP6NK90Z vs FQPF6N80 |