Datasheets
SIHFL110TR-GE3 by:

TRANSISTOR 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal

Part Details for SIHFL110TR-GE3 by Vishay Siliconix

Overview of SIHFL110TR-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SIHFL110TR-GE3

Part # Distributor Description Stock Price Buy
DISTI # 742-SIHFL110TR-GE3CT-ND
DigiKey MOSFET N-CH 100V 1.5A SOT223 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2500
In Stock
  • 1 $0.6100
  • 10 $0.5180
  • 100 $0.3598
  • 500 $0.2809
  • 1,000 $0.2283
  • 2,500 $0.2041
  • 5,000 $0.1937
  • 12,500 $0.1799
  • 25,000 $0.1757
$0.1757 / $0.6100 Buy Now

Part Details for SIHFL110TR-GE3

SIHFL110TR-GE3 CAD Models

SIHFL110TR-GE3 Part Data Attributes

SIHFL110TR-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SIHFL110TR-GE3 Vishay Siliconix TRANSISTOR 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHFL110TR-GE3

This table gives cross-reference parts and alternative options found for SIHFL110TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFL110TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL110TR Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Siliconix SIHFL110TR-GE3 vs IRFL110TR
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies SIHFL110TR-GE3 vs IRFL110
IRFL110PBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies SIHFL110TR-GE3 vs IRFL110PBF
SIHFL110TR-GE3 Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies SIHFL110TR-GE3 vs SIHFL110TR-GE3
Part Number Description Manufacturer Compare
IRFL4310TRPBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier SIHFL110TR-GE3 vs IRFL4310TRPBF
PMT200EN TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal NXP Semiconductors SIHFL110TR-GE3 vs PMT200EN
PMT200EN Small Signal Field-Effect Transistor Nexperia SIHFL110TR-GE3 vs PMT200EN
IRLM120AL99Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation SIHFL110TR-GE3 vs IRLM120AL99Z
PMV213SN,215 PMV213SN - N-channel TrenchMOS standard level FET@en-us TO-236 3-Pin Nexperia SIHFL110TR-GE3 vs PMV213SN,215
BSP372NH6327 Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG SIHFL110TR-GE3 vs BSP372NH6327
IRLM120AS62Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation SIHFL110TR-GE3 vs IRLM120AS62Z
IRFL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier SIHFL110TR-GE3 vs IRFL110TRPBF
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies SIHFL110TR-GE3 vs IRFL110
BSP373NH6327 Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG SIHFL110TR-GE3 vs BSP373NH6327

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