Part Details for SFR2955 by Samsung Semiconductor
Overview of SFR2955 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for SFR2955
SFR2955 CAD Models
SFR2955 Part Data Attributes
|
SFR2955
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
SFR2955
Samsung Semiconductor
Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 99 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 7.6 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 32 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SFR2955
This table gives cross-reference parts and alternative options found for SFR2955. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SFR2955, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STD10PF06T4 | P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET | STMicroelectronics | SFR2955 vs STD10PF06T4 |
SPB18P06P | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SFR2955 vs SPB18P06P |
SUD08P06-155L-E3 | Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SFR2955 vs SUD08P06-155L-E3 |
SFW9Z24TM | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | SFR2955 vs SFW9Z24TM |
SFW2955 | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | SFR2955 vs SFW2955 |
RFD8P06ESM9A | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | Fairchild Semiconductor Corporation | SFR2955 vs RFD8P06ESM9A |
SPD08P05 | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Infineon Technologies AG | SFR2955 vs SPD08P05 |
SPB18P06P | 18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN | Rochester Electronics LLC | SFR2955 vs SPB18P06P |
RFD8P05SM | 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SFR2955 vs RFD8P05SM |
SFW9Z24 | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 | Fairchild Semiconductor Corporation | SFR2955 vs SFW9Z24 |