Part Details for RFP50N05 by Harris Semiconductor
Overview of RFP50N05 by Harris Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFP50N05
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFP50N05-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 325 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
30202 In Stock |
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$0.9200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 1166 |
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$0.6728 / $1.4625 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 12 |
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$1.6800 / $2.2400 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 78 |
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$1.6262 / $2.9568 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 640 |
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$1.3860 / $3.3600 | Buy Now |
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Rochester Electronics | 50A, 50V, 0.022ohm, N-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 30202 |
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$0.7929 / $0.9328 | Buy Now |
Part Details for RFP50N05
RFP50N05 CAD Models
RFP50N05 Part Data Attributes:
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RFP50N05
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFP50N05
Harris Semiconductor
Power Field-Effect Transistor, 50A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | MEGAFET | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 132 W | |
| Power Dissipation-Max (Abs) | 132 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 100 ns |
Alternate Parts for RFP50N05
This table gives cross-reference parts and alternative options found for RFP50N05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP50N05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SSP50N05 | Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | RFP50N05 vs SSP50N05 |