Part Details for SSP50N06 by Samsung Semiconductor
Overview of SSP50N06 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SSP50N06
SSP50N06 CAD Models
SSP50N06 Part Data Attributes:
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SSP50N06
Samsung Semiconductor
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Datasheet
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SSP50N06
Samsung Semiconductor
Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SSP50N06
This table gives cross-reference parts and alternative options found for SSP50N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSP50N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFP50N05 | Power Field-Effect Transistor, 50A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Harris Semiconductor | SSP50N06 vs RFP50N05 |
| IRFZ44N | 49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | SSP50N06 vs IRFZ44N |
| IRFZ46N | Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | SSP50N06 vs IRFZ46N |
| HUF75329P3 | 42A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | SSP50N06 vs HUF75329P3 |
| HRFZ44N | 49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | SSP50N06 vs HRFZ44N |
| IRFZ46NPBF | Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | SSP50N06 vs IRFZ46NPBF |
| HUF75329P3 | Power Field-Effect Transistor, 42A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Harris Semiconductor | SSP50N06 vs HUF75329P3 |
| HRFZ44N | Power Field-Effect Transistor, 49A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | SSP50N06 vs HRFZ44N |
| AUIRFZ44N | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | SSP50N06 vs AUIRFZ44N |
| SMP60N06-18 | 60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | SSP50N06 vs SMP60N06-18 |