Datasheets
IRFZ44N by:

Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRFZ44N by International Rectifier

Overview of IRFZ44N by International Rectifier

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Price & Stock for IRFZ44N

Part # Distributor Description Stock Price Buy
Bristol Electronics   183
RFQ
Bristol Electronics   275
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 197
  • 1 $2.4000
  • 51 $0.9000
  • 168 $0.8400
$0.8400 / $2.4000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 40
  • 1 $2.5200
  • 3 $1.8900
  • 14 $1.5750
$1.5750 / $2.5200 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 2
  • 1 $3.7756
  • 2 $2.8317
$2.8317 / $3.7756 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 134
  • 1 $4.0200
  • 26 $2.6800
  • 94 $2.4790
$2.4790 / $4.0200 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 99
  • 1 $3.0150
  • 11 $2.2110
  • 35 $2.0100
$2.0100 / $3.0150 Buy Now

Part Details for IRFZ44N

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IRFZ44N Part Data Attributes:

IRFZ44N International Rectifier
Buy Now Datasheet
Compare Parts:
IRFZ44N International Rectifier Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 49 A
Drain-source On Resistance-Max 0.0175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 83 W
Power Dissipation-Max (Abs) 94 W
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFZ44N

This table gives cross-reference parts and alternative options found for IRFZ44N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ44N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ44NPBF Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRFZ44N vs IRFZ44NPBF
AUIRFZ44N Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRFZ44N vs AUIRFZ44N
STP55NE06 55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFZ44N vs STP55NE06
SMP60N06-18 60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments IRFZ44N vs SMP60N06-18
BUK456-60H TRANSISTOR 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFZ44N vs BUK456-60H
934055538127 TRANSISTOR 49 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors IRFZ44N vs 934055538127
HRFZ44N Power Field-Effect Transistor, 49A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation IRFZ44N vs HRFZ44N
IRFZ46NPBF Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFZ44N vs IRFZ46NPBF
Part Number Description Manufacturer Compare
AUIRFZ44N Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRFZ44N vs AUIRFZ44N
SSP50N06 Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRFZ44N vs SSP50N06
HRFZ44N 49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRFZ44N vs HRFZ44N
IRFZ46N Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRFZ44N vs IRFZ46N
HUF75329P3 Power Field-Effect Transistor, 42A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Harris Semiconductor IRFZ44N vs HUF75329P3
STP55NE06 55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFZ44N vs STP55NE06
HUF75329P3 42A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRFZ44N vs HUF75329P3
RFP50N05 50A, 50V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRFZ44N vs RFP50N05
BUK456-60H TRANSISTOR 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFZ44N vs BUK456-60H
HRFZ44N Power Field-Effect Transistor, 49A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation IRFZ44N vs HRFZ44N

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