Part Details for HUF75329P3 by Harris Semiconductor
Overview of HUF75329P3 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HUF75329P3
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | HUF75329 - N-Channel, ULTRAFET POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 3077 |
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$0.5512 / $0.6485 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 5 |
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$0.7500 / $1.1500 | Buy Now |
Part Details for HUF75329P3
HUF75329P3 CAD Models
HUF75329P3 Part Data Attributes:
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HUF75329P3
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
HUF75329P3
Harris Semiconductor
Power Field-Effect Transistor, 42A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 94 W | |
Power Dissipation-Max (Abs) | 94 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 100 ns | |
Turn-on Time-Max (ton) | 105 ns |
Alternate Parts for HUF75329P3
This table gives cross-reference parts and alternative options found for HUF75329P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75329P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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AUIRFZ44N | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | HUF75329P3 vs AUIRFZ44N |
SSP50N06 | Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | HUF75329P3 vs SSP50N06 |
HRFZ44N | 49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | HUF75329P3 vs HRFZ44N |
IRFZ44N | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | HUF75329P3 vs IRFZ44N |
IRFZ46N | Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | HUF75329P3 vs IRFZ46N |
STP55NE06 | 55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | HUF75329P3 vs STP55NE06 |
HUF75329P3 | 42A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | HUF75329P3 vs HUF75329P3 |
RFP50N05 | 50A, 50V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | HUF75329P3 vs RFP50N05 |
BUK456-60H | TRANSISTOR 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | HUF75329P3 vs BUK456-60H |
HRFZ44N | Power Field-Effect Transistor, 49A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | HUF75329P3 vs HRFZ44N |